Multi-state resistive switching memory with secure information storage in Au/BiFe0.95Mn0.05O3/La5/8Ca3/8MnO3 heterostructure

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	Multi-state resistive switching memory with secure information storage in Au/BiFe0.95Mn0.05O3/La5/8Ca3/8MnO3 heterostructure
	Y. P. Yao; Y. K. Liu; S. N. Dong; Y. W. Yin; S. W. Yang; X. G. Li
	2012
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	100 期号:19
摘要	The ferroelectric polarization dependent bipolar and conductive filament related unipolar resistive switching behaviors are investigated systematically in Au/BiFe0.95Mn0.05O3/La5/8Ca3/8MnO3 heterostructure. The results show that after conductive filaments are formed, the ferroelectric state previously polarized will keep almost unchanged. By combining the two resistive switching mechanisms together under appropriate programming conditions, a tri-state-like resistive switching behavior is realized, finding effective routes in designing high-density storage. According to these distinctive characteristics, a prototype memory device with secure information storage is properly designed as an example of promising applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714514]
部门归属	[yao, y. p.] univ sci & technol china, dept phys, hefei natl lab phys sci microscale, hefei 230026, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;yao, yp (reprint author), univ sci & technol china, dept phys, hefei natl lab phys sci microscale, hefei 230026, peoples r china.;lixg@ustc.edu.cn
关键词	Thin-films
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/60414
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. P. Yao,Y. K. Liu,S. N. Dong,et al. Multi-state resistive switching memory with secure information storage in Au/BiFe0.95Mn0.05O3/La5/8Ca3/8MnO3 heterostructure[J]. Applied Physics Letters,2012,100(19).
APA	Y. P. Yao,Y. K. Liu,S. N. Dong,Y. W. Yin,S. W. Yang,&X. G. Li.(2012).Multi-state resistive switching memory with secure information storage in Au/BiFe0.95Mn0.05O3/La5/8Ca3/8MnO3 heterostructure.Applied Physics Letters,100(19).
MLA	Y. P. Yao,et al."Multi-state resistive switching memory with secure information storage in Au/BiFe0.95Mn0.05O3/La5/8Ca3/8MnO3 heterostructure".Applied Physics Letters 100.19(2012).