Preparation and Formation Mechanism of Highly Dispersed Manganese Silicide on Silica by MOCVD of Mn(CO)(5)SiCl3

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	Preparation and Formation Mechanism of Highly Dispersed Manganese Silicide on Silica by MOCVD of Mn(CO)(5)SiCl3
	J. C. Guan; J. H. Jin; X. Chen; B. S. Zhang; D. S. Su; C. H. Liang
	2013
发表期刊	Chemical Vapor Deposition
ISSN	0948-1907
卷号	19 期号:1-3 页码:68-73
摘要	MnSi nanoparticles on silica are prepared by metal-organic (MO)CVD of Mn(CO)5SiCl3 as a single-source precursor. Mn(CO)5SiCl3 is synthesized from Mn2(CO)10 and SiHCl3 using standard Schlenk techniques, and confirmed by Fourier transform infrared (FTIR), single-crystal X-ray diffraction (XRD), and 13C and 29Si nuclear magnetic resonance (NMR). Powder XRD patterns, high resolution transmission electron microscopy (HRTEM), elemental maps, and energy dispersive X-ray (EDX) spectroscopy show that MnSi particles, with a size of about 56nm, are uniformly dispersed on the silica support. The formation mechanism of MnSi nanoparticles on silica is investigated by in-situ FTIR spectroscopy. The results demonstrate the formation details of MnSi nanoparticles from Mn(CO)5SiCl3 through the elimination of carbonyl groups and dissociation of SiCl bonds with the promotion of H2.
部门归属	[guan, jingchao ; jin, jianhui ; chen, xiao ; liang, changhai] dalian univ technol, lab adv mat & catalyt engn, sch chem engn, dalian 116024, peoples r china. [zhang, bingsen ; su, dangsheng] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. ; guan, jc (reprint author), dalian univ technol, lab adv mat & catalyt engn, sch chem engn, dalian 116024, peoples r china. ; changhai@dlut.edu.cn
关键词	Formation Mechanism In-situ Ftir Manganese Silicide Mn(Co)(5)Sicl3 Mocvd Chemical-vapor-deposition Nanowires Films Fe(Co)(4)(Sicl3)(2) Semihydrogenation Precursor Phase Fesi
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语种	英语
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/71230
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	J. C. Guan,J. H. Jin,X. Chen,et al. Preparation and Formation Mechanism of Highly Dispersed Manganese Silicide on Silica by MOCVD of Mn(CO)(5)SiCl3[J]. Chemical Vapor Deposition,2013,19(1-3):68-73.
APA	J. C. Guan,J. H. Jin,X. Chen,B. S. Zhang,D. S. Su,&C. H. Liang.(2013).Preparation and Formation Mechanism of Highly Dispersed Manganese Silicide on Silica by MOCVD of Mn(CO)(5)SiCl3.Chemical Vapor Deposition,19(1-3),68-73.
MLA	J. C. Guan,et al."Preparation and Formation Mechanism of Highly Dispersed Manganese Silicide on Silica by MOCVD of Mn(CO)(5)SiCl3".Chemical Vapor Deposition 19.1-3(2013):68-73.