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题名: Metal-insulator transition in variably doped (Bi1-xSbx)(2)Se-3 nanosheets
作者: C. H. Lee;  R. He;  Z. H. Wang;  R. L. J. Qiu;  A. Kumar;  C. Delaney;  B. Beck;  T. E. Kidd;  C. C. Chancey;  R. M. Sankaran;  X. P. A. Gao
发表日期: 2013
刊名: Nanoscale
相关网址: <Go to ISI>://WOS:000318362400043
Appears in Collections:中国科学院金属研究所_期刊论文

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Recommended Citation:
C. H. Lee,R. He,Z. H. Wang,et al. Metal-insulator Transition In Variably Doped (bi1-xsbx)(2)se-3 Nanosheets[J]. Nanoscale,2013,5(10):4337-4343.

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