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Effects of Zn addition on electromigration behavior of Sn-1Ag-0.5Cu solder interconnect
H. Y. Liu; Q. S. Zhu; Z. G. Wang; J. D. Guo; J. K. Shang
2013
发表期刊Journal of Materials Science-Materials in Electronics
ISSN0957-4522
卷号24期号:1页码:211-216
摘要Effects of electromigration on microstructure and tensile property were studied in the Sn-1Ag-0.5Cu and Sn-1Ag-0.5Cu-1Zn solder interconnects. While the polarity effect and strength reduction from electromigration occurred in the Sn-1Ag-0.5Cu solder interconnects, they were suppressed by the Zn addition in the Sn-1Ag-0.5Cu-1Zn solder interconnects. Such a strong effect of Zn was explained by the strong binding of Zn with Cu, which prevented the dissolution of the IMC at the cathode, and by the reverse migration of the Zn elements, which counteracted the increase in the vacancy concentration so that the strength reduction was successfully inhibited.
部门归属[liu, h. y. ; zhu, q. s. ; wang, z. g. ; guo, j. d. ; shang, j. k.] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. [shang, j. k.] univ illinois, dept mat sci & engn, urbana, il 61801 usa. ; zhu, qs (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. ; qszhu@imr.ac.cn
关键词Intermetallic Compound Formation Sn-3.8ag-0.7cu Solder Cu Microstructure Joints
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语种英语
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/71367
专题中国科学院金属研究所
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GB/T 7714
H. Y. Liu,Q. S. Zhu,Z. G. Wang,et al. Effects of Zn addition on electromigration behavior of Sn-1Ag-0.5Cu solder interconnect[J]. Journal of Materials Science-Materials in Electronics,2013,24(1):211-216.
APA H. Y. Liu,Q. S. Zhu,Z. G. Wang,J. D. Guo,&J. K. Shang.(2013).Effects of Zn addition on electromigration behavior of Sn-1Ag-0.5Cu solder interconnect.Journal of Materials Science-Materials in Electronics,24(1),211-216.
MLA H. Y. Liu,et al."Effects of Zn addition on electromigration behavior of Sn-1Ag-0.5Cu solder interconnect".Journal of Materials Science-Materials in Electronics 24.1(2013):211-216.
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