The mechanism for self-formation of a CeO2 diffusion barrier layer in an aluminide coating at high temperature

IMR OpenIR

	The mechanism for self-formation of a CeO2 diffusion barrier layer in an aluminide coating at high temperature
	X. Tan; X. Peng; F. Wang
	2013
发表期刊	Surface & Coatings Technology
ISSN	0257-8972
卷号	224 页码:62-70
摘要	A CeO2 dispersed delta-Ni2Al3 was formed by partially aluminizing an electrodeposited Ni film containing CeO2. The aluminide/Ni-CeO2 coating system itself quickly formed a CeO2-rich diffusion barrier between aluminide and Ni during annealing in vacuum at 1000 degrees C. A model for the formation of the diffusion barrier was proposed, based on the characterization of the evolution with time of the phase compositions of the aluminide at the interface. (C) 2013 Elsevier B.V. All rights reserved.
部门归属	[tan, x. ; peng, x. ; wang, f.] chinese acad sci, inst met res, state key lab corros & protect, shenyang 110016, peoples r china. ; peng, x (reprint author), chinese acad sci, inst met res, state key lab corros & protect, 62 wencui rd, shenyang 110016, peoples r china. ; xpeng@imr.ac.cn
关键词	Aluminide Coating Annealing Diffusion Barrier Electroplating Interdiffusion Single-crystal Superalloy Chemical-vapor-deposition Ni-base Superalloys Gas-turbine Blades Oxidation Behavior Resistant Coatings Alloy-steels Degrees-c Interdiffusion Platinum
URL	查看原文
语种	英语
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/71489
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	X. Tan,X. Peng,F. Wang. The mechanism for self-formation of a CeO2 diffusion barrier layer in an aluminide coating at high temperature[J]. Surface & Coatings Technology,2013,224:62-70.
APA	X. Tan,X. Peng,&F. Wang.(2013).The mechanism for self-formation of a CeO2 diffusion barrier layer in an aluminide coating at high temperature.Surface & Coatings Technology,224,62-70.
MLA	X. Tan,et al."The mechanism for self-formation of a CeO2 diffusion barrier layer in an aluminide coating at high temperature".Surface & Coatings Technology 224(2013):62-70.