Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor

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	Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor
	M. H. Wang; H. Lei; Y. Seki; S. Seki; Y. Sawada; Y. Hoshi; S. H. Wang; L. X. Sun
	2013
发表期刊	Journal of Thermal Analysis and Calorimetry
ISSN	1388-6150
卷号	111 期号:2 页码:1457-1461
摘要	Partly crystallized amorphous indium oxide thin films were deposited under water vapor atmosphere by magnetron sputtering. XRD analysis revealed that appropriate water vapor could suppress the film's crystallinity. In situ thermal crystallization process was monitored by high-temperature XRD. The crystallization data were analyzed using the Kolmogorov-Johnson-Mehl-Avrami equation. The kinetic exponent n is determined to be approx. 1/2 and 3/2 for film deposited in the absence and the presence of water vapor, respectively. The activation energy of crystallization for film deposited under 1 x 10(-5) Torr water vapor pressure was determined to be 30.7 kJ mol(-1), which is higher than 18.9 kJ mol(-1) for film deposited in the absence of water vapor. The increased activation energy caused by the chemically bonded hydrogen and embedded O-H bonds from the water vapor resulted in the suppression of crystallization. Introduction of appropriate water vapor during the deposition decreased the resistivity because of the increase of Hall mobility. The resistivity of the films after annealing increased due to the evaporation of water vapor resulted in crystal defects.
部门归属	[wang, meihan ; wang, shaohong] shenyang univ, ctr sci res, shenyang 110044, peoples r china. [lei, hao] chinese acad sci, inst met res, dept surface engn mat, shenyang 110016, peoples r china. [seki, yoshiyuki ; sawada, yutaka ; hoshi, yoichi] tokyo polytech univ, ctr hyper media res, atsugi, kanagawa 2430297, japan. [seki, shigeyuki] sendai natl coll technol, dept elect engn, aoba ku, sendai, miyagi 9893128, japan. [sun, lixian] chinese acad sci, dalian inst chem phys, mat & thermochem lab, dalian 116023, peoples r china. ; wang, mh (reprint author), shenyang univ, ctr sci res, 21 wanghua s st, shenyang 110044, peoples r china. ; wangmhdicp@yahoo.com.cn
关键词	Partly Crystallized Amorphous Io Film Water Vapor Thermal Crystallization Kinetic Electrical Properties Tin-oxide Microstructures
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语种	英语
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/71545
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	M. H. Wang,H. Lei,Y. Seki,et al. Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor[J]. Journal of Thermal Analysis and Calorimetry,2013,111(2):1457-1461.
APA	M. H. Wang.,H. Lei.,Y. Seki.,S. Seki.,Y. Sawada.,...&L. X. Sun.(2013).Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor.Journal of Thermal Analysis and Calorimetry,111(2),1457-1461.
MLA	M. H. Wang,et al."Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor".Journal of Thermal Analysis and Calorimetry 111.2(2013):1457-1461.