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氧化硅包覆单壁碳纳米管纳米电缆的制备(英文)
张艳丽; 侯鹏翔; 刘畅
2013-02-15
Source Publication新型炭材料
Issue1Pages:8-13
Abstract采用氢电弧放电法直接制备了无定形氧化硅包覆单壁碳纳米管同轴纳米电缆。纳米电缆的长度为几微米到数十微米,直径约为10~30 nm。纳米电缆的外包覆层为无定形氧化硅,每根电缆的芯部包含1根到几根单壁碳纳米管。单壁碳纳米管具有较高的结晶度,其直径主要集中在2.2 nm和1.8 nm。基于实验研究结果,提出了一种纳米电缆的生长机制。所制备的无定形氧化硅包覆单壁碳纳米管纳米电缆可望用于场效应晶体管等纳电子器件的构建。
description.department中国科学院金属研究所沈阳材料科学国家(联合)实验室
Keyword同轴纳米电缆 单壁碳纳米管 氧化硅 电弧放电
Language中文
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/71783
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
张艳丽,侯鹏翔,刘畅. 氧化硅包覆单壁碳纳米管纳米电缆的制备(英文)[J]. 新型炭材料,2013(1):8-13.
APA 张艳丽,侯鹏翔,&刘畅.(2013).氧化硅包覆单壁碳纳米管纳米电缆的制备(英文).新型炭材料(1),8-13.
MLA 张艳丽,et al."氧化硅包覆单壁碳纳米管纳米电缆的制备(英文)".新型炭材料 .1(2013):8-13.
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