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题名: Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition
作者: T. Ma;  W. C. Ren;  X. Y. Zhang;  Z. B. Liu;  Y. Gao;  L. C. Yin;  X. L. Ma;  F. Ding;  H. M. Cheng
发表日期: 2013
刊名: Proceedings of the National Academy of Sciences of the United States of America
相关网址: <Go to ISI>://WOS:000328548600024
Appears in Collections:中国科学院金属研究所_期刊论文

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Recommended Citation:
T. Ma,W. C. Ren,X. Y. Zhang,et al. Edge-controlled Growth And Kinetics Of Single-crystal Graphene Domains By Chemical Vapor Deposition[J]. Proceedings Of The National Academy Of Sciences Of The United States Of America,2013,110(51):20386-20391.

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