Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition

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	Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition
	T. Ma; W. C. Ren; X. Y. Zhang; Z. B. Liu; Y. Gao; L. C. Yin; X. L. Ma; F. Ding; H. M. Cheng
	2013
发表期刊	Proceedings of the National Academy of Sciences of the United States of America
ISSN	0027-8424
卷号	110 期号:51 页码:20386-20391
摘要	The controlled growth of large-area, high-quality, single-crystal graphene is highly desired for applications in electronics and optoelectronics; however, the production of this material remains challenging because the atomistic mechanism that governs graphene growth is not well understood. The edges of graphene, which are the sites at which carbon accumulates in the two-dimensional honeycomb lattice, influence many properties, including the electronic properties and chemical reactivity of graphene, and they are expected to significantly influence its growth. We demonstrate the growth of single-crystal graphene domains with controlled edges that range from zigzag to armchair orientations via growth-etching-regrowth in a chemical vapor deposition process. We have observed that both the growth and the etching rates of a single-crystal graphene domain increase linearly with the slanted angle of its edges from 0 degrees to similar to 19 degrees and that the rates for an armchair edge are faster than those for a zigzag edge. Such edge-structure-dependent growth/etching kinetics of graphene can be well explained at the atomic level based on the concentrations of the kinks on various edges and allow the evolution and control of the edge and morphology in single-crystal graphene following the classical kinetic Wulff construction theory. Using these findings, we propose several strategies for the fabrication of wafer-sized, high-quality, single-crystal graphene.
部门归属	[ma, teng ; ren, wencai ; liu, zhibo ; gao, yang ; yin, li-chang ; ma, xiu-liang ; cheng, hui-ming] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. [zhang, xiuyun ; ding, feng] hong kong polytech univ, inst text & clothing, kowloon, hong kong, peoples r china. [ding, feng] beijing computat sci res ctr, beijing 100084, peoples r china. ; ren, wc (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. ; wcren@imr.ac.cn ; feng.ding@polyu.edu.hk ; cheng@imr.ac.cn
关键词	Two-dimensional Materials Crystal Growth Stability Grains Equilibrium Nanoribbons Films Cu
URL	查看原文
语种	英语
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/72341
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	T. Ma,W. C. Ren,X. Y. Zhang,et al. Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition[J]. Proceedings of the National Academy of Sciences of the United States of America,2013,110(51):20386-20391.
APA	T. Ma.,W. C. Ren.,X. Y. Zhang.,Z. B. Liu.,Y. Gao.,...&H. M. Cheng.(2013).Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition.Proceedings of the National Academy of Sciences of the United States of America,110(51),20386-20391.
MLA	T. Ma,et al."Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition".Proceedings of the National Academy of Sciences of the United States of America 110.51(2013):20386-20391.