Direct Observation of Atomic Dynamics and Silicon Doping at a Topological Defect in Graphene

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	Direct Observation of Atomic Dynamics and Silicon Doping at a Topological Defect in Graphene
	Z. Q. Yang; L. C. Yin; J. Lee; W. C. Ren; H. M. Cheng; H. Q. Ye; S. T. Pantelides; S. J. Pennycook; M. F. Chisholm
	2014
发表期刊	Angewandte Chemie-International Edition
ISSN	1433-7851
卷号	53 期号:34 页码:8908-8912
摘要	Chemical decoration of defects is an effective way to functionalize graphene and to study mechanisms of their interaction with environment. We monitored dynamic atomic processes during the formation of a rotary Si trimer in monolayer graphene using an aberration-corrected scanning-transmission electron microscope. An incoming Si atom competed with and replaced a metastable C dimer next to a pair of Si substitutional atoms at a topological defect in graphene, producing a Si trimer. Other atomic events including removal of single C atoms, incorporation and relocation of a C dimer, reversible C C bond rotation, and vibration of Si atoms occurred before the final formation of the Si trimer. Theoretical calculations indicate that it requires 2.0 eV to rotate the Si trimer. Our real-time results provide insight with atomic precision for reaction dynamics during chemical doping at defects in graphene, which have implications for defect nanoengineering of graphene.
部门归属	[yang, zhiqing ; yin, lichang ; ren, wencai ; cheng, hui-ming ; ye, hengqiang] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. [lee, jaekwang ; chisholm, matthew f.] oak ridge natl lab, div mat sci & technol, oak ridge, tn 37831 usa. [pantelides, sokrates t.] vanderbilt univ, dept phys & astron, nashville, tn 37235 usa. [pennycook, stephen j. ; chisholm, matthew f.] univ tennessee, dept mat sci & engn, knoxville, tn 37996 usa. ; yang, zq (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china. ; yangzq@imr.ac.cn ; chisholmmf@ornl.gov
关键词	Density Functional Calculations Doping Electron Microscopy Graphene Silicon Single-molecule Growth Stability Membranes Films Motor Gas
URL	查看原文
语种	英语
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/73473
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. Q. Yang,L. C. Yin,J. Lee,et al. Direct Observation of Atomic Dynamics and Silicon Doping at a Topological Defect in Graphene[J]. Angewandte Chemie-International Edition,2014,53(34):8908-8912.
APA	Z. Q. Yang.,L. C. Yin.,J. Lee.,W. C. Ren.,H. M. Cheng.,...&M. F. Chisholm.(2014).Direct Observation of Atomic Dynamics and Silicon Doping at a Topological Defect in Graphene.Angewandte Chemie-International Edition,53(34),8908-8912.
MLA	Z. Q. Yang,et al."Direct Observation of Atomic Dynamics and Silicon Doping at a Topological Defect in Graphene".Angewandte Chemie-International Edition 53.34(2014):8908-8912.