Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films

IMR OpenIR

	Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films
	Wang, W. Y.; Tang, Y. L.; Zhu, Y. L.; Suriyaprakash, J.; Xu, Y. B.; Liu, Y.; Gao, B.; Cheong, S-W.; Ma, X. L.; ylzhu@imr.ac.cn; xlma@imr.ac.cn
	2015
发表期刊	SCIENTIFIC REPORTS
ISSN	2045-2322
卷号	5 页码:-
摘要	Doped BaSnO3 has arisen many interests recently as one of the promising transparent conducting oxides for future applications. Understanding the microstructural characteristics are crucial for the exploration of relevant devices. In this paper, we investigated the microstructural features of 0.001% La doped BaSnO3 thin film using both conventional and aberration corrected transmission electron microscopes. Contrast analysis shows high densities of Ruddlesden-Popper faults in the film, which are on {100} planes with translational displacements of 1/2a <111>. Atomic EELS element mappings reveal that the Ruddlesden-Popper faults are Ba-O layer terminated, and two kinds of kink structures at the Ruddlesden-Popper faults with different element distributions are also demonstrated. Quantitative analysis on lattice distortions of the Ruddlesden-Popper faults illustrates that the local lattice spacing poses a huge increment of 36%, indicating that large strains exist around the Ruddlesden-Popper faults in the film.
部门归属	[wang, w. y. ; tang, y. l. ; zhu, y. l. ; suriyaprakash, j. ; xu, y. b. ; liu, y. ; ma, x. l.] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china ; [gao, b. ; cheong, s-w.] rutgers state univ, rutgers ctr emergent mat, piscataway, nj 08854 usa ; [gao, b. ; cheong, s-w.] rutgers state univ, dept phys & astron, piscataway, nj 08854 usa
资助者	National Natural Science Foundation of China [51231007, 51171190]; National Basic Research Program of China [2014CB921002, 2009CB623705]; Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4413]
收录类别	sci
语种	英语
WOS记录号	WOS:000363962100001
引用统计	被引频次：36[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/74646
专题	中国科学院金属研究所
通讯作者	ylzhu@imr.ac.cn; xlma@imr.ac.cn
推荐引用方式 GB/T 7714	Wang, W. Y.,Tang, Y. L.,Zhu, Y. L.,et al. Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films[J]. SCIENTIFIC REPORTS,2015,5:-.
APA	Wang, W. Y..,Tang, Y. L..,Zhu, Y. L..,Suriyaprakash, J..,Xu, Y. B..,...&xlma@imr.ac.cn.(2015).Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films.SCIENTIFIC REPORTS,5,-.
MLA	Wang, W. Y.,et al."Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films".SCIENTIFIC REPORTS 5(2015):-.