Zn-dopant dependent defect evolution in GaN nanowires

IMR OpenIR

	Zn-dopant dependent defect evolution in GaN nanowires
	Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Lju, Qingyun; Yuan, Fang; Jiang, Xin; xijiang@imr.ac.cn
	2015
发表期刊	NANOSCALE
ISSN	2040-3364
卷号	7 期号:39 页码:16237-16245
摘要	Zn doped GaN nanowires with different doping levels (0, < 1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (10<(1)over bar>3), (10 (1) over bar1) and (20 (2) over bar1), as well as Type I stacking faults (...ABAB (C) under bar BCB.), are observed in the nanowires. The increasing Zn doping level (< 1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABA<(C)under bar>BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.
部门归属	[yang, bing ; liu, baodan ; wang, yujia ; lju, qingyun ; yuan, fang ; jiang, xin] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china ; [zhuang, hao ; jiang, xin] univ siegen, inst mat engn, d-57076 siegen, germany
资助者	National Nature Science Foundation of China [51402309]; Knowledge Innovation Program of Institute of Metal Research (IMR); Chinese Academy of Science (CAS) [Y2NCA111A1, Y3NCA111A1]; Youth Innovation Promotion Association, Chinese Academy of Sciences [Y4NC711171]
收录类别	sci
语种	英语
WOS记录号	WOS:000362350700014
引用统计	被引频次：26[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/75247
专题	中国科学院金属研究所
通讯作者	xijiang@imr.ac.cn
推荐引用方式 GB/T 7714	Yang, Bing,Liu, Baodan,Wang, Yujia,et al. Zn-dopant dependent defect evolution in GaN nanowires[J]. NANOSCALE,2015,7(39):16237-16245.
APA	Yang, Bing.,Liu, Baodan.,Wang, Yujia.,Zhuang, Hao.,Lju, Qingyun.,...&xijiang@imr.ac.cn.(2015).Zn-dopant dependent defect evolution in GaN nanowires.NANOSCALE,7(39),16237-16245.
MLA	Yang, Bing,et al."Zn-dopant dependent defect evolution in GaN nanowires".NANOSCALE 7.39(2015):16237-16245.