Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers

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	Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers
	Wang, Chun; Huang, Nan; Zhuang, Hao; Zhai, Zhaofeng; Yang, Bing; Liu, Lusheng; Jiang, Xin; Jiang, X (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China.
	2016-08-15
发表期刊	SURFACE & COATINGS TECHNOLOGY
ISSN	0257-8972
卷号	299 页码:96-103
摘要	The controllable growth of heteroepitaxial cubic SiC (3C-SiC) films and two dimensional (2D) nanosheets arrays has been successfully achieved using a 915 MHz microwave plasma enhanced chemical vapor (MPCVD) deposited technique using tetramethylsilane (TMS) and hydrogen as the resource gases. A comprehensive analysis of the surface morphology of the 3C-SIC films was performed by tuning microwave power, TMS flow rate and gas pressure. With increasing microwave power, the morphology of the SiC crystals evolves from randomly oriented nanocrystals to well-oriented pyramid shaped crystals. The rocking curve results shows that the 3C-SiC film deposited at microwave power of 9 kW and gas pressure of 50 mbar remains epitaxial feature with increasing of TMS gas flow rate. As a result, uniform heteroepitaxial 3C-SiC film was deposited on 4-in. silicon wafer at low deposition temperature (similar to 860 degrees C). The structure of SiC film along the radial direction was measured by X-ray diffraction (XRD) results. X-ray photoelectron spectroscopy (XPS) spectra indicate the chemical information of SiC film surface and the depth profiles, which prove the uniform of elements distribution. Moreover, with increasing gas pressure, the film morphology transforms from the heteroepitaxial SiC film into 2D nanosheets, which is due to the increased ion current. (C) 2016 Elsevier B.V. All rights reserved.
部门归属	[wang, chun ; huang, nan ; zhai, zhaofeng ; yang, bing ; liu, lusheng ; jiang, xin] chinese acad sci, inst met res, shenyang natl lab mat sci, wenhua rd 72, shenyang 110016, peoples r china ; [zhuang, hao ; jiang, xin] univ siegen, inst mat engn, paul bonatz str 9-11, d-57076 siegen, germany
关键词	Sic Films Mpcvd Heteroepitaxial Large-scale 2d Nanosheets
学科领域	Materials Science ; Physics
资助者	National Natural Science Foundation of China [51202257]
收录类别	sci
语种	英语
WOS记录号	WOS:000378664900013
引用统计	被引频次：15[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/75771
专题	中国科学院金属研究所
通讯作者	Jiang, X (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China.
推荐引用方式 GB/T 7714	Wang, Chun,Huang, Nan,Zhuang, Hao,et al. Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers[J]. SURFACE & COATINGS TECHNOLOGY,2016,299:96-103.
APA	Wang, Chun.,Huang, Nan.,Zhuang, Hao.,Zhai, Zhaofeng.,Yang, Bing.,...&Jiang, X .(2016).Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers.SURFACE & COATINGS TECHNOLOGY,299,96-103.
MLA	Wang, Chun,et al."Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers".SURFACE & COATINGS TECHNOLOGY 299(2016):96-103.