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Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution
Zhang, Feng; Hou, Peng-Xiang; Liu, Chang; Wang, Bing-Wei; Jiang, Hua; Chen, Mao-Lin; Sun, Dong-Ming; Li, Jin-Cheng; Cong, Hong-Tao; Kauppinen, Esko I.; Cheng, Hui-Ming; Liu, C; Cheng, HM (reprint author), Chinese Acad Sci, Inst Met Res, Adv Carbon Div, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Cheng, HM (reprint author), King Abdulaziz Univ, Dept Chem, Fac Sci, Jeddah 21589, Saudi Arabia.
2016-03-01
Source PublicationNATURE COMMUNICATIONS
ISSN2041-1723
Volume7
AbstractThe growth of high-quality semiconducting single-wall carbon nanotubes with a narrow band-gap distribution is crucial for the fabrication of high-performance electronic devices. However, the single-wall carbon nanotubes grown from traditional metal catalysts usually have diversified structures and properties. Here we design and prepare an acorn-like, partially carbon-coated cobalt nanoparticle catalyst with a uniform size and structure by the thermal reduction of a [Co(CN)(6)](3-) precursor adsorbed on a self-assembled block copolymer nanodomain. The inner cobalt nanoparticle functions as active catalytic phase for carbon nanotube growth, whereas the outer carbon layer prevents the aggregation of cobalt nanoparticles and ensures a perpendicular growth mode. The grown single-wall carbon nanotubes have a very narrow diameter distribution centred at 1.7 nm and a high semiconducting content of >95%. These semiconducting single-wall carbon nanotubes have a very small band-gap difference of similar to 0.08 eV and show excellent thin-film transistor performance.
description.department[zhang, feng ; hou, peng-xiang ; liu, chang ; wang, bing-wei ; chen, mao-lin ; sun, dong-ming ; li, jin-cheng ; cong, hong-tao ; cheng, hui-ming] chinese acad sci, inst met res, adv carbon div, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china ; [jiang, hua ; kauppinen, esko i.] aalto univ, sch sci, dept appl phys, nano mat grp, pob 15100, fi-00076 aalto, finland ; [jiang, hua ; kauppinen, esko i.] aalto univ, sch sci, ctr new mat, pob 15100, fi-00076 aalto, finland ; [cheng, hui-ming] king abdulaziz univ, dept chem, fac sci, jeddah 21589, saudi arabia
Subject AreaScience & Technology - Other Topics
Funding OrganizationMinistry of Science and Technology of China [2011CB932601]; National Natural Science Foundation of China [51532008, 51572264, 51272256, 61422406, 51272257, 61574143, 51372254]; Chinese Academy of Sciences [KGZD-EW-T06]; CAS/SAFEA International Partnership Program for Creative Research Teams, Liaoning BaiQianWan Talents Program; EU-JST joint project IRENA
Indexed Bysci
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/75939
Collection中国科学院金属研究所
Corresponding AuthorLiu, C; Cheng, HM (reprint author), Chinese Acad Sci, Inst Met Res, Adv Carbon Div, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Cheng, HM (reprint author), King Abdulaziz Univ, Dept Chem, Fac Sci, Jeddah 21589, Saudi Arabia.
Recommended Citation
GB/T 7714
Zhang, Feng,Hou, Peng-Xiang,Liu, Chang,et al. Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution[J]. NATURE COMMUNICATIONS,2016,7.
APA Zhang, Feng.,Hou, Peng-Xiang.,Liu, Chang.,Wang, Bing-Wei.,Jiang, Hua.,...&Cheng, HM .(2016).Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution.NATURE COMMUNICATIONS,7.
MLA Zhang, Feng,et al."Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution".NATURE COMMUNICATIONS 7(2016).
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