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Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes
Jia, S.; Sun, H. D.; Du, J. H.; Zhang, Z. K.; Zhang, D. D.; Ma, L. P.; Chen, J. S.; Ma, D. G.; Cheng, H. M.; Ren, W. C.; Du, JH; Ren, WC (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Ma, DG (reprint author), Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymers Phys & Chem, 5625 Renmin St, Changchun 130022, Peoples R China.
2016
发表期刊NANOSCALE
ISSN2040-3364
卷号8期号:20页码:10714-10723
摘要The relatively high sheet resistance, low work function and poor compatibility with hole injection layers (HILs) seriously limit the applications of graphene as transparent conductive electrodes (TCEs) for organic light emitting diodes (OLEDs). Here, a graphene oxide/graphene (GO/G) vertical heterostructure is developed as TCEs for high-performance OLEDs, by directly oxidizing the top layer of three-layer graphene films with ozone treatment. Such GO/G heterostructure electrodes show greatly improved optical transmittance, a large work function, high stability, and good compatibility with HIL materials (MoO3 in this work). Moreover, the conductivity of the heterostructure is not sacrificed compared to the pristine three-layer graphene electrodes, but is significantly higher than that of pristine two-layer graphene films. In addition to high flexibility, OLEDs with different emission colors based on the GO/G heterostructure TCEs show much better performance than those based on indium tin oxide (ITO) anodes. Green OLEDs with GO/G heterostructure electrodes have the maximum current efficiency and power efficiency, as high as 82.0 cd A(-1) and 98.2 mu m W-1, respectively, which are 36.7% (14.8%) and 59.2% (15.0%) higher than those with pristine graphene (ITO) anodes. These findings open up the possibility of using graphene for next generation high-performance flexible and wearable optoelectronics with high stability.
部门归属[jia, s. ; du, j. h. ; zhang, z. k. ; zhang, d. d. ; ma, l. p. ; cheng, h. m. ; ren, w. c.] chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china ; [sun, h. d. ; chen, j. s. ; ma, d. g.] chinese acad sci, changchun inst appl chem, state key lab polymers phys & chem, 5625 renmin st, changchun 130022, peoples r china
学科领域Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
资助者National High-Tech Research and Development Program of China [2012AA030303]; National Science Foundation of China [51572265, 51325205, 51290273, 51521091, 51172240, 51102241]; Chinese Academy of Sciences [KGZD-EW-303-1, KGZD-EW-303-3, KGZD-EW-T06]; Science and Technology Bureau of Changchun City [13KG26]; Postdoctoral Science Foundation of China [2015M580237]
收录类别sci
语种英语
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/75957
专题中国科学院金属研究所
通讯作者Du, JH; Ren, WC (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Ma, DG (reprint author), Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymers Phys & Chem, 5625 Renmin St, Changchun 130022, Peoples R China.
推荐引用方式
GB/T 7714
Jia, S.,Sun, H. D.,Du, J. H.,et al. Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes[J]. NANOSCALE,2016,8(20):10714-10723.
APA Jia, S..,Sun, H. D..,Du, J. H..,Zhang, Z. K..,Zhang, D. D..,...&Ma, DG .(2016).Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes.NANOSCALE,8(20),10714-10723.
MLA Jia, S.,et al."Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes".NANOSCALE 8.20(2016):10714-10723.
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