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Effect of substrate temperature on microstructure and electrical properties of LaNiO3 films grown on SiO2/Si substrates by pulsed laser deposition under a high oxygen pressure
He, B; Wang, ZJ; Wang, ZJ (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
2016-10-01
Source PublicationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN0947-8396
Volume122Issue:10
AbstractLanthanum nickel oxide (LaNiO3: LNO) thin films were deposited on SiO2/Si(100) substrates by pulsed laser deposition under a high oxygen pressure of 50 Pa, and the effect of substrate temperature on the microstructure and electrical properties of the LNO films were studied by depositing the films at different temperatures. The results showed that the substrate temperature has a significant influence on the crystallinity, grain size, surface roughness and electrical resistivity of the LNO films, and the LNO films deposited at 650 degrees C show a low room-temperature resistivity of 420 mu Omega cm. X-ray photoelectron spectroscopic analysis results revealed that the use of the high oxygen pressure in deposition process can avoid the oxygen loss in the films. The use of the LNO films as an electrode layer for the BaTiO3 and PbZr0.52Ti0.48O3 ferroelectric films was also confirmed, and the results indicate that the high-quality LNO films on Si substrates not only can be used as an electrode layer, but also as a seed layer to control the preferred orientation of ferroelectric films.
description.department[he, bin ; wang, zhanjie] chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, peoples r china
Subject AreaMaterials Science, Multidisciplinary ; Physics, Applied
Funding OrganizationChinese Academy of Sciences; National Natural Science Foundation of China [51172238]
Indexed Bysci
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/76247
Collection中国科学院金属研究所
Corresponding AuthorWang, ZJ (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
Recommended Citation
GB/T 7714
He, B,Wang, ZJ,Wang, ZJ . Effect of substrate temperature on microstructure and electrical properties of LaNiO3 films grown on SiO2/Si substrates by pulsed laser deposition under a high oxygen pressure[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2016,122(10).
APA He, B,Wang, ZJ,&Wang, ZJ .(2016).Effect of substrate temperature on microstructure and electrical properties of LaNiO3 films grown on SiO2/Si substrates by pulsed laser deposition under a high oxygen pressure.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,122(10).
MLA He, B,et al."Effect of substrate temperature on microstructure and electrical properties of LaNiO3 films grown on SiO2/Si substrates by pulsed laser deposition under a high oxygen pressure".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 122.10(2016).
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