Effect of substrate temperature on microstructure and electrical properties of LaNiO3 films grown on SiO2/Si substrates by pulsed laser deposition under a high oxygen pressure

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	Effect of substrate temperature on microstructure and electrical properties of LaNiO3 films grown on SiO2/Si substrates by pulsed laser deposition under a high oxygen pressure
	He, B; Wang, ZJ; Wang, ZJ (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
	2016-10-01
发表期刊	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN	0947-8396
卷号	122 期号:10
摘要	Lanthanum nickel oxide (LaNiO3: LNO) thin films were deposited on SiO2/Si(100) substrates by pulsed laser deposition under a high oxygen pressure of 50 Pa, and the effect of substrate temperature on the microstructure and electrical properties of the LNO films were studied by depositing the films at different temperatures. The results showed that the substrate temperature has a significant influence on the crystallinity, grain size, surface roughness and electrical resistivity of the LNO films, and the LNO films deposited at 650 degrees C show a low room-temperature resistivity of 420 mu Omega cm. X-ray photoelectron spectroscopic analysis results revealed that the use of the high oxygen pressure in deposition process can avoid the oxygen loss in the films. The use of the LNO films as an electrode layer for the BaTiO3 and PbZr0.52Ti0.48O3 ferroelectric films was also confirmed, and the results indicate that the high-quality LNO films on Si substrates not only can be used as an electrode layer, but also as a seed layer to control the preferred orientation of ferroelectric films.
部门归属	[he, bin ; wang, zhanjie] chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, peoples r china
学科领域	Materials Science, Multidisciplinary ; Physics, Applied
资助者	Chinese Academy of Sciences; National Natural Science Foundation of China [51172238]
收录类别	sci
语种	英语
WOS记录号	WOS:000384753800035
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/76247
专题	中国科学院金属研究所
通讯作者	Wang, ZJ (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
推荐引用方式 GB/T 7714	He, B,Wang, ZJ,Wang, ZJ . Effect of substrate temperature on microstructure and electrical properties of LaNiO3 films grown on SiO2/Si substrates by pulsed laser deposition under a high oxygen pressure[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2016,122(10).
APA	He, B,Wang, ZJ,&Wang, ZJ .(2016).Effect of substrate temperature on microstructure and electrical properties of LaNiO3 films grown on SiO2/Si substrates by pulsed laser deposition under a high oxygen pressure.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,122(10).
MLA	He, B,et al."Effect of substrate temperature on microstructure and electrical properties of LaNiO3 films grown on SiO2/Si substrates by pulsed laser deposition under a high oxygen pressure".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 122.10(2016).