Electron optics with p-n junctions in ballistic graphene

IMR OpenIR

	Electron optics with p-n junctions in ballistic graphene
	Chen, SW; Han, Z; Elahi, MM; Habib, KMM; Wang, L; Wen, B; Gao, YD; Taniguchi, T; Watanabe, K; Hone, J; Ghosh, AW; Dean, CR; Dean, CR (reprint author), Columbia Univ, Dept Phys, 538 W 120th St, New York, NY 10027 USA.; Dean, CR (reprint author), Intel Corp, Santa Clara, CA 95054 USA.
	2016-09-30
发表期刊	SCIENCE
ISSN	0036-8075
卷号	353 期号:6307 页码:1522-1525
摘要	Electrons transmitted across a ballistic semiconductor junction are expected to undergo refraction, analogous to light rays across an optical boundary. In graphene, the linear dispersion and zero-gap band structure admit highly transparent p-n junctions by simple electrostatic gating. Here, we employ transverse magnetic focusing to probe the propagation of carriers across an electrostatically defined graphene junction. We find agreement with the predicted Snell's law for electrons, including the observation of both positive and negative refraction. Resonant transmission across the p-n junction provides a direct measurement of the angle-dependent transmission coefficient. Comparing experimental data with simulations reveals the crucial role played by the effective junction width, providing guidance for future device design. Our results pave the way for realizing electron optics based on graphene p-n junctions.
部门归属	[chen, shaowen ; han, zheng ; wen, bo ; dean, cory r.] columbia univ, dept phys, 538 w 120th st, new york, ny 10027 usa ; [chen, shaowen] columbia univ, dept appl phys & appl math, new york, ny 10027 usa ; [elahi, mirza m. ; habib, k. m. masum ; ghosh, avik w.] univ virginia, dept elect & comp engn, charlottesville, va 22904 usa ; [wang, lei] cornell univ, dept phys, ithaca, ny 14853 usa ; [gao, yuanda ; hone, james] columbia univ, dept mech engn, new york, ny 10027 usa ; [taniguchi, takashi ; watanabe, kenji] natl inst mat sci, 1-1 namiki, tsukuba, ibaraki 3050047, japan ; [han, zheng] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china ; [wen, bo] ibm corp, thomas j watson res ctr, 1101 kitchawan rd, yorktown hts, ny 10598 usa ; [habib, k. m. masum ; dean, cory r.] intel corp, santa clara, ca 95054 usa
学科领域	Multidisciplinary Sciences
资助者	Semiconductor Research Corporation's NRI Center for Institute for Nanoelectronics Discovery and Exploration (INDEX)
收录类别	sci
语种	英语
WOS记录号	WOS:000387678700041
引用统计	被引频次：243[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/76271
专题	中国科学院金属研究所
通讯作者	Dean, CR (reprint author), Columbia Univ, Dept Phys, 538 W 120th St, New York, NY 10027 USA.; Dean, CR (reprint author), Intel Corp, Santa Clara, CA 95054 USA.
推荐引用方式 GB/T 7714	Chen, SW,Han, Z,Elahi, MM,et al. Electron optics with p-n junctions in ballistic graphene[J]. SCIENCE,2016,353(6307):1522-1525.
APA	Chen, SW.,Han, Z.,Elahi, MM.,Habib, KMM.,Wang, L.,...&Dean, CR .(2016).Electron optics with p-n junctions in ballistic graphene.SCIENCE,353(6307),1522-1525.
MLA	Chen, SW,et al."Electron optics with p-n junctions in ballistic graphene".SCIENCE 353.6307(2016):1522-1525.