Giant UV photoresponse of a GaN nanowire photodetector through effective Pt nanoparticle coupling | |
Zhang, Xinglai; Liu, Qingyun; Liu, Baodan; Yang, Wenjin; Li, Jing; Niu, Pingjuan; Jiang, Xin; Liu, BD; Jiang, X (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci SYNL, IMR, 72 Wenhua Rd, Shenyang 110016, Peoples R China. | |
2017-05-07 | |
发表期刊 | JOURNAL OF MATERIALS CHEMISTRY C
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ISSN | 2050-7526 |
卷号 | 5期号:17页码:4319-4326 |
摘要 | High performance ultraviolet (UV) photodetectors based on semiconducting nanowires are expected to have extensive applications in UV-ray detection, optical communication and environmental monitoring. In this work, GaN nanowire photodetectors have been fabricated and giant UV photoresponse has been achieved with Pt nanoparticle (NP) modification. The peak responsivity and external quantum efficiency (EQE) of the GaN nanowire UV photodetector were increased from 773 to 6.39 x 10(4) A W (1) and from 2.71 x 10(5)% to 2.24 x 10(7)%, respectively, and the response time and sensitivity were improved greatly after Pt NP decoration on the GaN nanowire surface. Moreover, the Pt-GaN nanowire photodetector still presents its spectrum selectivity in the UV region. Our results reveal that Pt nanoparticles play a key role in enhancing the photodetection performance of the nanodevice due to the strong absorption and scattering of incident light induced by localized surface plasmon resonance (LSPR) and the improvement of interfacial charge separation owing to the special device configuration. These findings offer an efficient avenue toward the performance enhancement of GaN nanowire and related optoelectronic devices or systems.; High performance ultraviolet (UV) photodetectors based on semiconducting nanowires are expected to have extensive applications in UV-ray detection, optical communication and environmental monitoring. In this work, GaN nanowire photodetectors have been fabricated and giant UV photoresponse has been achieved with Pt nanoparticle (NP) modification. The peak responsivity and external quantum efficiency (EQE) of the GaN nanowire UV photodetector were increased from 773 to 6.39 x 10(4) A W (1) and from 2.71 x 10(5)% to 2.24 x 10(7)%, respectively, and the response time and sensitivity were improved greatly after Pt NP decoration on the GaN nanowire surface. Moreover, the Pt-GaN nanowire photodetector still presents its spectrum selectivity in the UV region. Our results reveal that Pt nanoparticles play a key role in enhancing the photodetection performance of the nanodevice due to the strong absorption and scattering of incident light induced by localized surface plasmon resonance (LSPR) and the improvement of interfacial charge separation owing to the special device configuration. These findings offer an efficient avenue toward the performance enhancement of GaN nanowire and related optoelectronic devices or systems. |
部门归属 | [zhang, xinglai ; liu, qingyun ; liu, baodan ; yang, wenjin ; li, jing ; jiang, xin] chinese acad sci, shenyang natl lab mat sci synl, imr, 72 wenhua rd, shenyang 110016, peoples r china ; [liu, qingyun] univ chinese acad sci, 19 a yuquan rd, beijing 100049, peoples r china ; [niu, pingjuan] tianjin polytech univ, sch elect engn & automat, 399 binshuixi rd, tianjin 300387, peoples r china |
学科领域 | Materials Science, Multidisciplinary ; Physics, Applied |
资助者 | Knowledge Innovation Program of Institute of Metal Research, Chinese Academy of Sciences [Y2NCA111A1, Y3NCA111A1]; Youth Innovation Promotion Association, Chinese Academy of Sciences [Y4NC711171]; Basic Science Innovation Program of Shenyang National Laboratory for Materials Science [Y4NC6R1161]; National Torch Plan [2015GHA100042B00] |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000401102800027 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/78141 |
专题 | 中国科学院金属研究所 |
通讯作者 | Liu, BD; Jiang, X (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci SYNL, IMR, 72 Wenhua Rd, Shenyang 110016, Peoples R China. |
推荐引用方式 GB/T 7714 | Zhang, Xinglai,Liu, Qingyun,Liu, Baodan,et al. Giant UV photoresponse of a GaN nanowire photodetector through effective Pt nanoparticle coupling[J]. JOURNAL OF MATERIALS CHEMISTRY C,2017,5(17):4319-4326. |
APA | Zhang, Xinglai.,Liu, Qingyun.,Liu, Baodan.,Yang, Wenjin.,Li, Jing.,...&Jiang, X .(2017).Giant UV photoresponse of a GaN nanowire photodetector through effective Pt nanoparticle coupling.JOURNAL OF MATERIALS CHEMISTRY C,5(17),4319-4326. |
MLA | Zhang, Xinglai,et al."Giant UV photoresponse of a GaN nanowire photodetector through effective Pt nanoparticle coupling".JOURNAL OF MATERIALS CHEMISTRY C 5.17(2017):4319-4326. |
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