Sputtering gas pressure and target power dependence on the microstructure and properties of DC-magnetron sputtered AlB2-type WB2 films

IMR OpenIR

	Sputtering gas pressure and target power dependence on the microstructure and properties of DC-magnetron sputtered AlB2-type WB2 films
	Liu, Y. M.; Han, R. Q.; Liu, F.; Pei, Z. L.; Sun, C.; Pei, ZL (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China.
	2017-05-05
发表期刊	JOURNAL OF ALLOYS AND COMPOUNDS
ISSN	0925-8388
卷号	703 页码:188-197
摘要	The study is mainly to optimize the process parameters (sputtering pressure and sputtering power) of the AlB2-type WB2 films deposited by DC magnetron sputtering by comparing their microstructure, elemental composition, and tribo-mechanical properties. As the argon pressure (PAr) increases (0.3-1.0 Pa), the particle density increases first and then decreases, with a corresponding decrease for particle energy. Under this condition, both the deposition rate and the B/W atomic ratio of the WB2 films increase first and then decrease under the competition effect between the sputtering and scattering process, the film orientation changes from (0 0 1) to (1 0 1), the microstructure changes from dense finefiber to porous column coupled with the stress evolution from compressive stress to increased tensile stress. Consequently, films deposited at P-Ar > 0.5 Pa have the poor hardness and wear-resistance. As the sputtering power increases (150-310 W), both the particle density and particle energy increase. Thus, the deposition rate increases greatly, the B/W atomic ratio declines slightly due to the resputtering process, the film structure becomes dense but rough by the particle bombardment causing the stress change from tensile stress to enhanced compressive stress, and the film orientation changes from the well-crystallized (0 0 1) to poor-crystallized (1 0 1). In conclusion, films with (0 0 1) orientation, high B/W atomic ratio, dense structure and proper compressive stress, which can be deposited at P-Ar (=) 0.5 Pa and sputtering current 0.5 A (corresponding to target power about 150 W), show the excellent tribomechanical properties with high hardness about 39.4 GPa and low wear rate of 2.2 Chi 10(-7) mm(3)/mN. (C) 2017 Elsevier B.V. All rights reserved.; The study is mainly to optimize the process parameters (sputtering pressure and sputtering power) of the AlB2-type WB2 films deposited by DC magnetron sputtering by comparing their microstructure, elemental composition, and tribo-mechanical properties. As the argon pressure (PAr) increases (0.3-1.0 Pa), the particle density increases first and then decreases, with a corresponding decrease for particle energy. Under this condition, both the deposition rate and the B/W atomic ratio of the WB2 films increase first and then decrease under the competition effect between the sputtering and scattering process, the film orientation changes from (0 0 1) to (1 0 1), the microstructure changes from dense finefiber to porous column coupled with the stress evolution from compressive stress to increased tensile stress. Consequently, films deposited at P-Ar > 0.5 Pa have the poor hardness and wear-resistance. As the sputtering power increases (150-310 W), both the particle density and particle energy increase. Thus, the deposition rate increases greatly, the B/W atomic ratio declines slightly due to the resputtering process, the film structure becomes dense but rough by the particle bombardment causing the stress change from tensile stress to enhanced compressive stress, and the film orientation changes from the well-crystallized (0 0 1) to poor-crystallized (1 0 1). In conclusion, films with (0 0 1) orientation, high B/W atomic ratio, dense structure and proper compressive stress, which can be deposited at P-Ar (=) 0.5 Pa and sputtering current 0.5 A (corresponding to target power about 150 W), show the excellent tribomechanical properties with high hardness about 39.4 GPa and low wear rate of 2.2 Chi 10(-7) mm(3)/mN. (C) 2017 Elsevier B.V. All rights reserved.
部门归属	[liu, y. m. ; han, r. q. ; liu, f.] xian shiyou univ, coll mat sci & engn, xian 710065, peoples r china ; [pei, z. l. ; sun, c.] chinese acad sci, inst met res, shenyang 110016, peoples r china
关键词	Alb2-type Wb2 Films Dc Magnetron Sputtering Sputtering Pressure Sputtering Power Tribo-mechanical Properties
学科领域	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
资助者	National Natural Science Foundation of China [51505378]; Scientific Research Foundation [2016BS22]; National Training Programs of Innovation and Entrepreneurship for Undergraduates [201610705036]
收录类别	SCI
语种	英语
WOS记录号	WOS:000397634000025
引用统计	被引频次：32[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/78145
专题	中国科学院金属研究所
通讯作者	Pei, ZL (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China.
推荐引用方式 GB/T 7714	Liu, Y. M.,Han, R. Q.,Liu, F.,et al. Sputtering gas pressure and target power dependence on the microstructure and properties of DC-magnetron sputtered AlB2-type WB2 films[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,703:188-197.
APA	Liu, Y. M.,Han, R. Q.,Liu, F.,Pei, Z. L.,Sun, C.,&Pei, ZL .(2017).Sputtering gas pressure and target power dependence on the microstructure and properties of DC-magnetron sputtered AlB2-type WB2 films.JOURNAL OF ALLOYS AND COMPOUNDS,703,188-197.
MLA	Liu, Y. M.,et al."Sputtering gas pressure and target power dependence on the microstructure and properties of DC-magnetron sputtered AlB2-type WB2 films".JOURNAL OF ALLOYS AND COMPOUNDS 703(2017):188-197.