Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications

IMR OpenIR

	Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications
	Liu, Baodan; Li, Jing; Yang, Wenjin; Zhang, Xinglai; Jiang, Xin; Bando, Yoshio; Liu, BD (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
	2017-12-06
发表期刊	WILEY-V C H VERLAG GMBH
ISSN	1613-6810
卷号	13 期号:45 页码:-
摘要	The innovation of band-gap engineering in advanced materials caused by the alloying of different semiconductors into solid-solution nanostructures provides numerous opportunities and advantages in optoelectronic property tailoring. The semiconductor solid-solution nanostructures have multifarious emission wavelength, adjustability of absorption edge, tunable electrical resistivity, and cutting-edge photoredox capability, and these advantages can be rationalized by the assorted synthesis strategies such as, binary, ternary, and quaternary solid-solutions. In addition, the abundance of elements in groups IIB, IIIA, VA, VIA, and VIIA provides sufficient room to tailor-make the semiconductor solid-solution nanostructures with the desired properties. Recent progress of semiconductor solid-solution nanostructures including synthesis strategies, structure and composition design, band-gap engineering related to the optical and electrical properties, and their applications in different fields is comprehensively reviewed. The classification, formation principle, synthesis routes, and the advantage of semiconductor solid-solution nanostructures are systematically reviewed. Moreover, the challenges faced in this area and the future prospects are discussed. By combining the information together, it is strongly anticipated that this Review may shed new light on understanding semiconductor solid-solution nanostructures while expected to have continuous breakthroughs in band-gap engineering and advanced optoelectronic nanodevices.; The innovation of band-gap engineering in advanced materials caused by the alloying of different semiconductors into solid-solution nanostructures provides numerous opportunities and advantages in optoelectronic property tailoring. The semiconductor solid-solution nanostructures have multifarious emission wavelength, adjustability of absorption edge, tunable electrical resistivity, and cutting-edge photoredox capability, and these advantages can be rationalized by the assorted synthesis strategies such as, binary, ternary, and quaternary solid-solutions. In addition, the abundance of elements in groups IIB, IIIA, VA, VIA, and VIIA provides sufficient room to tailor-make the semiconductor solid-solution nanostructures with the desired properties. Recent progress of semiconductor solid-solution nanostructures including synthesis strategies, structure and composition design, band-gap engineering related to the optical and electrical properties, and their applications in different fields is comprehensively reviewed. The classification, formation principle, synthesis routes, and the advantage of semiconductor solid-solution nanostructures are systematically reviewed. Moreover, the challenges faced in this area and the future prospects are discussed. By combining the information together, it is strongly anticipated that this Review may shed new light on understanding semiconductor solid-solution nanostructures while expected to have continuous breakthroughs in band-gap engineering and advanced optoelectronic nanodevices.
部门归属	[liu, baodan ; li, jing ; yang, wenjin ; zhang, xinglai ; jiang, xin] chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, peoples r china ; [bando, yoshio] nims, world premier int ctr mat, nanoarchitecton wpi mana, namiki 1-1, tsukuba, ibaraki 3050044, japan ; [bando, yoshio] univ wollongong, australian inst innovat mat aim, squires way, north wollongong, nsw 2500, australia
关键词	Band-gap Engineering Nanostructures Optoelectronic Properties Semiconductor Solid-solution
学科领域	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
资助者	National Natural Science Foundation of China [51702326]; Knowledge Innovation Program of Institute of Metal Research, Chinese Academy of Sciences [Y2NCA111A1, Y3NCA111A1]; Youth Innovation Promotion Association, Chinese Academy of Sciences [Y4NC711171]; Basic Science Innovation Program of Shenyang National Laboratory for Materials Science [Y4NC6R1161]
收录类别	SCI
语种	英语
WOS记录号	WOS:000416946800012
引用统计	被引频次：43[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/78938
专题	中国科学院金属研究所
通讯作者	Liu, BD (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
推荐引用方式 GB/T 7714	Liu, Baodan,Li, Jing,Yang, Wenjin,et al. Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications[J]. WILEY-V C H VERLAG GMBH,2017,13(45):-.
APA	Liu, Baodan.,Li, Jing.,Yang, Wenjin.,Zhang, Xinglai.,Jiang, Xin.,...&Liu, BD .(2017).Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications.WILEY-V C H VERLAG GMBH,13(45),-.
MLA	Liu, Baodan,et al."Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications".WILEY-V C H VERLAG GMBH 13.45(2017):-.