IMR OpenIR
Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications
Liu, Baodan; Li, Jing; Yang, Wenjin; Zhang, Xinglai; Jiang, Xin; Bando, Yoshio; Liu, BD (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
2017-12-06
Source PublicationWILEY-V C H VERLAG GMBH
ISSN1613-6810
Volume13Issue:45Pages:-
AbstractThe innovation of band-gap engineering in advanced materials caused by the alloying of different semiconductors into solid-solution nanostructures provides numerous opportunities and advantages in optoelectronic property tailoring. The semiconductor solid-solution nanostructures have multifarious emission wavelength, adjustability of absorption edge, tunable electrical resistivity, and cutting-edge photoredox capability, and these advantages can be rationalized by the assorted synthesis strategies such as, binary, ternary, and quaternary solid-solutions. In addition, the abundance of elements in groups IIB, IIIA, VA, VIA, and VIIA provides sufficient room to tailor-make the semiconductor solid-solution nanostructures with the desired properties. Recent progress of semiconductor solid-solution nanostructures including synthesis strategies, structure and composition design, band-gap engineering related to the optical and electrical properties, and their applications in different fields is comprehensively reviewed. The classification, formation principle, synthesis routes, and the advantage of semiconductor solid-solution nanostructures are systematically reviewed. Moreover, the challenges faced in this area and the future prospects are discussed. By combining the information together, it is strongly anticipated that this Review may shed new light on understanding semiconductor solid-solution nanostructures while expected to have continuous breakthroughs in band-gap engineering and advanced optoelectronic nanodevices.; The innovation of band-gap engineering in advanced materials caused by the alloying of different semiconductors into solid-solution nanostructures provides numerous opportunities and advantages in optoelectronic property tailoring. The semiconductor solid-solution nanostructures have multifarious emission wavelength, adjustability of absorption edge, tunable electrical resistivity, and cutting-edge photoredox capability, and these advantages can be rationalized by the assorted synthesis strategies such as, binary, ternary, and quaternary solid-solutions. In addition, the abundance of elements in groups IIB, IIIA, VA, VIA, and VIIA provides sufficient room to tailor-make the semiconductor solid-solution nanostructures with the desired properties. Recent progress of semiconductor solid-solution nanostructures including synthesis strategies, structure and composition design, band-gap engineering related to the optical and electrical properties, and their applications in different fields is comprehensively reviewed. The classification, formation principle, synthesis routes, and the advantage of semiconductor solid-solution nanostructures are systematically reviewed. Moreover, the challenges faced in this area and the future prospects are discussed. By combining the information together, it is strongly anticipated that this Review may shed new light on understanding semiconductor solid-solution nanostructures while expected to have continuous breakthroughs in band-gap engineering and advanced optoelectronic nanodevices.
description.department[liu, baodan ; li, jing ; yang, wenjin ; zhang, xinglai ; jiang, xin] chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, peoples r china ; [bando, yoshio] nims, world premier int ctr mat, nanoarchitecton wpi mana, namiki 1-1, tsukuba, ibaraki 3050044, japan ; [bando, yoshio] univ wollongong, australian inst innovat mat aim, squires way, north wollongong, nsw 2500, australia
KeywordBand-gap Engineering Nanostructures Optoelectronic Properties Semiconductor Solid-solution
Subject AreaChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
Funding OrganizationNational Natural Science Foundation of China [51702326]; Knowledge Innovation Program of Institute of Metal Research, Chinese Academy of Sciences [Y2NCA111A1, Y3NCA111A1]; Youth Innovation Promotion Association, Chinese Academy of Sciences [Y4NC711171]; Basic Science Innovation Program of Shenyang National Laboratory for Materials Science [Y4NC6R1161]
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/78938
Collection中国科学院金属研究所
Corresponding AuthorLiu, BD (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
Recommended Citation
GB/T 7714
Liu, Baodan,Li, Jing,Yang, Wenjin,et al. Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications[J]. WILEY-V C H VERLAG GMBH,2017,13(45):-.
APA Liu, Baodan.,Li, Jing.,Yang, Wenjin.,Zhang, Xinglai.,Jiang, Xin.,...&Liu, BD .(2017).Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications.WILEY-V C H VERLAG GMBH,13(45),-.
MLA Liu, Baodan,et al."Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications".WILEY-V C H VERLAG GMBH 13.45(2017):-.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Liu, Baodan]'s Articles
[Li, Jing]'s Articles
[Yang, Wenjin]'s Articles
Baidu academic
Similar articles in Baidu academic
[Liu, Baodan]'s Articles
[Li, Jing]'s Articles
[Yang, Wenjin]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Liu, Baodan]'s Articles
[Li, Jing]'s Articles
[Yang, Wenjin]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.