A carbon nanotube non-volatile memory device using a photoresist gate dielectric

IMR OpenIR

	A carbon nanotube non-volatile memory device using a photoresist gate dielectric
	Sun, Yun; Wang, Bing-Wei; Hou, Peng-Xiang; Liu, Chang; Fang, Lin-Lin; Tan, Jun; Sun, Dong-Ming; Cheng, Hui-Ming; Sun, DM (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.; Cheng, HM (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 96 Jinzhai Rd, Hefei 230026, Anhui, Peoples R China.
	2017-11-01
发表期刊	PERGAMON-ELSEVIER SCIENCE LTD
ISSN	0008-6223
卷号	124 页码:700-707
摘要	Carbon nanotube (CNT) thin films have attracted great attention for their use in flexible electronics, including thin-film transistors (TFTs) and memory devices, due to their excellent optical, electrical and mechanical properties. The flexibility of current CNT TFTs is usually limited by the use of rigid inorganic oxide insulators. Gate dielectrics made of polymers are promising candidates that give the device the desired flexibility. Here, we present a simple and effective method to format a patterned gate insulator using photoresist polymers to fabricate high-performance and good-flexibility CNT TFTs. The contact windows in gate insulators can be easily formatted for electrical interconnections in TFTs and integrated circuits, which will much simplify the fabrication processes. The fabricated CNT TFTs with a 1000-nm-thick photoresist insulator exhibited an on-off current ratio of 10(6), a mobility of 45 cm(2) V-1 s(-1), a low operation voltage of less than 5 V, and a gate leakage current lower than 10(-11) A. A 5000-cycle bend test showed negligible changes to the mobility and on/off current ratio, demonstrating the good flexibility of the devices. A non-volatile memory device was demonstrated, showing the potential use of these flexible CNT-based electronics. (C) 2017 Elsevier Ltd. All rights reserved.; Carbon nanotube (CNT) thin films have attracted great attention for their use in flexible electronics, including thin-film transistors (TFTs) and memory devices, due to their excellent optical, electrical and mechanical properties. The flexibility of current CNT TFTs is usually limited by the use of rigid inorganic oxide insulators. Gate dielectrics made of polymers are promising candidates that give the device the desired flexibility. Here, we present a simple and effective method to format a patterned gate insulator using photoresist polymers to fabricate high-performance and good-flexibility CNT TFTs. The contact windows in gate insulators can be easily formatted for electrical interconnections in TFTs and integrated circuits, which will much simplify the fabrication processes. The fabricated CNT TFTs with a 1000-nm-thick photoresist insulator exhibited an on-off current ratio of 10(6), a mobility of 45 cm(2) V-1 s(-1), a low operation voltage of less than 5 V, and a gate leakage current lower than 10(-11) A. A 5000-cycle bend test showed negligible changes to the mobility and on/off current ratio, demonstrating the good flexibility of the devices. A non-volatile memory device was demonstrated, showing the potential use of these flexible CNT-based electronics. (C) 2017 Elsevier Ltd. All rights reserved.
部门归属	[sun, yun ; wang, bing-wei ; hou, peng-xiang ; liu, chang ; tan, jun ; sun, dong-ming ; cheng, hui-ming] chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, liaoning, peoples r china ; [wang, bing-wei ; hou, peng-xiang ; liu, chang ; sun, dong-ming ; cheng, hui-ming] univ sci & technol china, sch mat sci & engn, 96 jinzhai rd, hefei 230026, anhui, peoples r china ; [wang, bing-wei] univ chinese acad sci, 19 a yuquan rd, beijing 100049, peoples r china ; [fang, lin-lin] wuhan china star optoelect technol co ltd, 8 zuoling rd, wuhan 430078, hubei, peoples r china ; [cheng, hui-ming] tsinghua univ, tsinghua berkeley shenzhen inst, 1001 xueyuan rd, shenzhen 518055, peoples r china
学科领域	Chemistry, Physical ; Materials Science, Multidisciplinary
资助者	Ministry of Science and Technology of China [2016YFA0200101, 2016YFA0200102, 2016YFB04001100]; National Natural Science Foundation of China [51521091, 51532008, 51572264, 51272256, 61422406, 61574143, 51372254, 51502304]; China Postdoctoral Science Foundation [2015M58137]; Chinese Academy of Sciences [KGZD-EW-T06]; CAS/SAFEA International Partnership Program for Creative Research Teams; Thousand Talent Program for Young Outstanding Scientists; Liaoning BaiQianWan Talents Program; EU-JST Joint Project IRENA
收录类别	SCI
语种	英语
WOS记录号	WOS:000412118200078
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/79015
专题	中国科学院金属研究所
通讯作者	Sun, DM (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.; Cheng, HM (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 96 Jinzhai Rd, Hefei 230026, Anhui, Peoples R China.
推荐引用方式 GB/T 7714	Sun, Yun,Wang, Bing-Wei,Hou, Peng-Xiang,et al. A carbon nanotube non-volatile memory device using a photoresist gate dielectric[J]. PERGAMON-ELSEVIER SCIENCE LTD,2017,124:700-707.
APA	Sun, Yun.,Wang, Bing-Wei.,Hou, Peng-Xiang.,Liu, Chang.,Fang, Lin-Lin.,...&Cheng, HM .(2017).A carbon nanotube non-volatile memory device using a photoresist gate dielectric.PERGAMON-ELSEVIER SCIENCE LTD,124,700-707.
MLA	Sun, Yun,et al."A carbon nanotube non-volatile memory device using a photoresist gate dielectric".PERGAMON-ELSEVIER SCIENCE LTD 124(2017):700-707.