Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films

IMR OpenIR

	Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films
	Li, Mingze; Wang, Zhenhua; Yang, Liang; Li, Da; Yao, Q. R.; Rao, G. H.; Gao, Xuan P. A.; Zhang, Zhidong; Wang, ZH (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.; Wang, ZH (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.
	2017-08-24
发表期刊	AMER PHYSICAL SOC
ISSN	2469-9950
卷号	96 期号:7 页码:-
摘要	CuxBi2Se3 is known for superconductivity due to Cu intercalation in the van der Waals gaps between the quintuple layers of Bi2Se3 at x > 0.10. Here we report the synthesis and transport properties of Cu-doped CuxBi2Se3 films prepared by the chemical-vapor-deposition (CVD) method with 0.11 >= x >= 0. It is found that the insulatinglike temperature-dependent resistivity of polycrystalline CuxBi2Se3 films exhibits a marked metallic downturn and an increase of carrier concentration below similar to 37 K. There is also a time-dependent slow relaxation behavior in the resistance at low temperature. These effects might be related to the strong hybridization between Cu+ and Cu2+ conduction bands from the intercalated Cu+ and substituted Cu2+ sites in Bi2Se3 films. The findings here have important implications for the understanding and development of doping-induced superconductivity in topological insulators.; CuxBi2Se3 is known for superconductivity due to Cu intercalation in the van der Waals gaps between the quintuple layers of Bi2Se3 at x > 0.10. Here we report the synthesis and transport properties of Cu-doped CuxBi2Se3 films prepared by the chemical-vapor-deposition (CVD) method with 0.11 >= x >= 0. It is found that the insulatinglike temperature-dependent resistivity of polycrystalline CuxBi2Se3 films exhibits a marked metallic downturn and an increase of carrier concentration below similar to 37 K. There is also a time-dependent slow relaxation behavior in the resistance at low temperature. These effects might be related to the strong hybridization between Cu+ and Cu2+ conduction bands from the intercalated Cu+ and substituted Cu2+ sites in Bi2Se3 films. The findings here have important implications for the understanding and development of doping-induced superconductivity in topological insulators.
部门归属	[li, mingze ; wang, zhenhua ; yang, liang ; li, da ; zhang, zhidong] chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, liaoning, peoples r china ; [li, mingze ; wang, zhenhua ; yang, liang ; li, da ; zhang, zhidong] univ sci & technol china, sch mat sci & engn, 72 wenhua rd, shenyang 110016, liaoning, peoples r china ; [yao, q. r. ; rao, g. h.] guilin univ elect technol, guangxi key lab informat mat, sch mat sci & engn, 1 jinji rd, guilin 541004, guangxi, peoples r china ; [gao, xuan p. a.] case western reserve univ, dept phys, cleveland, oh 44106 usa
学科领域	Physics, Condensed Matter
资助者	National Natural Science Foundation of China [51522104, 51331006]; National Key R&D Program of China [2017YFA0206302]; National Science Foundation [DMR-1151534]; Guangxi National Science Foundation [2012GXNS-FGA060002]
收录类别	SCI
语种	英语
WOS记录号	WOS:000408342200003
引用统计	被引频次：18[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/79142
专题	中国科学院金属研究所
通讯作者	Wang, ZH (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.; Wang, ZH (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.
推荐引用方式 GB/T 7714	Li, Mingze,Wang, Zhenhua,Yang, Liang,et al. Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films[J]. AMER PHYSICAL SOC,2017,96(7):-.
APA	Li, Mingze.,Wang, Zhenhua.,Yang, Liang.,Li, Da.,Yao, Q. R..,...&Wang, ZH .(2017).Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films.AMER PHYSICAL SOC,96(7),-.
MLA	Li, Mingze,et al."Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films".AMER PHYSICAL SOC 96.7(2017):-.