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题名: Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films
作者: Li, Mingze;  Wang, Zhenhua;  Yang, Liang;  Li, Da;  Yao, Q. R.;  Rao, G. H.;  Gao, Xuan P. A.;  Zhang, Zhidong
发表日期: 2017-8-24
摘要: CuxBi2Se3 is known for superconductivity due to Cu intercalation in the van der Waals gaps between the quintuple layers of Bi2Se3 at x > 0.10. Here we report the synthesis and transport properties of Cu-doped CuxBi2Se3 films prepared by the chemical-vapor-deposition (CVD) method with 0.11 >= x >= 0. It is found that the insulatinglike temperature-dependent resistivity of polycrystalline CuxBi2Se3 films exhibits a marked metallic downturn and an increase of carrier concentration below similar to 37 K. There is also a time-dependent slow relaxation behavior in the resistance at low temperature. These effects might be related to the strong hybridization between Cu+ and Cu2+ conduction bands from the intercalated Cu+ and substituted Cu2+ sites in Bi2Se3 films. The findings here have important implications for the understanding and development of doping-induced superconductivity in topological insulators.
刊名: AMER PHYSICAL SOC
Appears in Collections:中国科学院金属研究所_期刊论文

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Recommended Citation:
Li, Mingze,Wang, Zhenhua,Yang, Liang,et al. Electron Delocalization And Relaxation Behavior In Cu-doped Bi2se3 Films[J]. Amer Physical Soc,2017,96(7):-.

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