Nanoindentation-induced phase transformation between SiC polymorphs

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	Nanoindentation-induced phase transformation between SiC polymorphs
	Yao, TT; Yin, DQ; Saito, M; Wu, B; Chen, CL; Ma, XL; Chen, CL (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
	2018-06-01
发表期刊	MATERIALS LETTERS
ISSN	0167-577X
卷号	220 页码:152-155
摘要	Nanoindentation-induced phase transformation between silicon carbide (SiC) polymorphs has been investigated by a combined study of transmission electron microscopy and first principles calculations. In situ nanoindentation of 4H-SiC single crystals revealed the occurrence of a phase transformation from 4H to 3C in the vicinity of a crack. First principles calculations pointed out an extremely low energy barrier for this phase transformation, which could be attributed to the very smooth transition in the atomic and electronic structures across the 3C/4H interface. The phase transformation from 4H to 3C may retard the propagation of cracks and reduce the band gap of SiC. (C) 2018 Elsevier B.V. All rights reserved.; Nanoindentation-induced phase transformation between silicon carbide (SiC) polymorphs has been investigated by a combined study of transmission electron microscopy and first principles calculations. In situ nanoindentation of 4H-SiC single crystals revealed the occurrence of a phase transformation from 4H to 3C in the vicinity of a crack. First principles calculations pointed out an extremely low energy barrier for this phase transformation, which could be attributed to the very smooth transition in the atomic and electronic structures across the 3C/4H interface. The phase transformation from 4H to 3C may retard the propagation of cracks and reduce the band gap of SiC. (C) 2018 Elsevier B.V. All rights reserved.
部门归属	[yao, tingting ; wu, bo ; chen, chunlin ; ma, xiuliang] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, liaoning, peoples r china ; [yin, deqiang] chongqing univ, coll aerosp engn, chongqing 400044, peoples r china ; [saito, mitsuhiro] tohoku univ, adv inst mat res, sendai, miyagi 9808577, japan ; [saito, mitsuhiro] univ tokyo, inst engn innovat, tokyo 1160013, japan
关键词	Silicon-carbide Polytypes Molecules 4h
学科领域	Materials Science, Multidisciplinary ; Physics, Applied
资助者	Key Research Program of Frontier Sciences, CAS [QYZDY-SSW-JSC027]; "Thousand Youth Talents Plan" of China; National Natural Science Foundation of China [51771200, 11332013]
收录类别	SCI
语种	英语
WOS记录号	WOS:000428018800040
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/79296
专题	中国科学院金属研究所
通讯作者	Chen, CL (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
推荐引用方式 GB/T 7714	Yao, TT,Yin, DQ,Saito, M,et al. Nanoindentation-induced phase transformation between SiC polymorphs[J]. MATERIALS LETTERS,2018,220:152-155.
APA	Yao, TT.,Yin, DQ.,Saito, M.,Wu, B.,Chen, CL.,...&Chen, CL .(2018).Nanoindentation-induced phase transformation between SiC polymorphs.MATERIALS LETTERS,220,152-155.
MLA	Yao, TT,et al."Nanoindentation-induced phase transformation between SiC polymorphs".MATERIALS LETTERS 220(2018):152-155.