| Regulation of depletion layer width in Pb(Zr,Ti)O-3/Nb:SrTiO3 heterostructures |
| Bai, Y; Wang, ZJ; Cui, JZ; Zhang, ZD; Wang, ZJ (reprint author), Northeastern Univ, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China.; Wang, ZJ (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Wang, ZJ (reprint author), Shenyang Univ Technol, Sch Mat Sci & Engn, Shenyang 110870, Liaoning, Peoples R China.
|
| 2018-05-23
|
发表期刊 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
ISSN | 0022-3727
|
卷号 | 51期号:20页码:- |
摘要 | Improving the tunability of depletion layer width (DLW) in ferroelectric/semiconductor heterostructures is important for the performance of some devices. In this work, 200-nm-thick Pb(Zr0.4Ti0.6)O-3 (PZT) films were deposited on different Nb-doped SrTiO3 (NSTO) substrates, and the tunability of DLW at PZT/NSTO interfaces were studied. Our results showed that the maximum tunability of the DLW was achieved at the NSTO substrate with 0.5 wt% Nb. On the basis of the modified capacitance model and the ferroelectric semiconductor theory, we suggest that the tunability of the DLW in PZT/NSTO heterostructures can be attributed to a delicate balance of the depletion layer charge and the ferroelectric polarization charge. Therefore, the performance of some devices related to the tunability of DLW in ferroelectric/ semiconductor heterostructures can be improved by modulating the doping concentration in semiconducting electrode materials.; Improving the tunability of depletion layer width (DLW) in ferroelectric/semiconductor heterostructures is important for the performance of some devices. In this work, 200-nm-thick Pb(Zr0.4Ti0.6)O-3 (PZT) films were deposited on different Nb-doped SrTiO3 (NSTO) substrates, and the tunability of DLW at PZT/NSTO interfaces were studied. Our results showed that the maximum tunability of the DLW was achieved at the NSTO substrate with 0.5 wt% Nb. On the basis of the modified capacitance model and the ferroelectric semiconductor theory, we suggest that the tunability of the DLW in PZT/NSTO heterostructures can be attributed to a delicate balance of the depletion layer charge and the ferroelectric polarization charge. Therefore, the performance of some devices related to the tunability of DLW in ferroelectric/ semiconductor heterostructures can be improved by modulating the doping concentration in semiconducting electrode materials. |
部门归属 | [bai, yu
; wang, zhan jie
; cui, jian zhong] northeastern univ, sch mat sci & engn, shenyang 110819, liaoning, peoples r china
; [bai, yu
; wang, zhan jie
; zhang, zhi dong] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, liaoning, peoples r china
; [wang, zhan jie] shenyang univ technol, sch mat sci & engn, shenyang 110870, liaoning, peoples r china
|
关键词 | Metal/ferroelectric/semiconductor Tunnel-junctions
Ferroelectric Thin-films
Electroresistance
Field
|
学科领域 | Physics, Applied
|
资助者 | Chinese Academy of Sciences; National Natural Science Foundation of China [51172238]
|
收录类别 | SCI
|
语种 | 英语
|
WOS记录号 | WOS:000431142700002
|
引用统计 |
|
文献类型 | 期刊论文
|
条目标识符 | http://ir.imr.ac.cn/handle/321006/79302
|
专题 | 中国科学院金属研究所
|
通讯作者 | Wang, ZJ (reprint author), Northeastern Univ, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China.; Wang, ZJ (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Wang, ZJ (reprint author), Shenyang Univ Technol, Sch Mat Sci & Engn, Shenyang 110870, Liaoning, Peoples R China. |
推荐引用方式 GB/T 7714 |
Bai, Y,Wang, ZJ,Cui, JZ,et al. Regulation of depletion layer width in Pb(Zr,Ti)O-3/Nb:SrTiO3 heterostructures[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2018,51(20):-.
|
APA |
Bai, Y.,Wang, ZJ.,Cui, JZ.,Zhang, ZD.,Wang, ZJ .,...&Wang, ZJ .(2018).Regulation of depletion layer width in Pb(Zr,Ti)O-3/Nb:SrTiO3 heterostructures.JOURNAL OF PHYSICS D-APPLIED PHYSICS,51(20),-.
|
MLA |
Bai, Y,et al."Regulation of depletion layer width in Pb(Zr,Ti)O-3/Nb:SrTiO3 heterostructures".JOURNAL OF PHYSICS D-APPLIED PHYSICS 51.20(2018):-.
|
修改评论