Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current

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	Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current
	Zhao, XT; Zhao, YQ; Liu, W; Dai, ZM; Wang, TT; Zhao, XG; Zhang, ZD; Liu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
	2018-05-01
发表期刊	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN	1005-0302
卷号	34 期号:5 页码:832-835
摘要	By inserting an ultrathin Pt layer at Co/Ru interface, we established antiferromagnetic coupling with out-of-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering. To achieve configuration suitable for free layer, the magnetic properties of the stacks have been investigated by changing the thickness of Co, Ru and Pt layers using an orthogonal wedges technique. It is found that magnetic properties for upper Co layer thinner than 0.5 nm are sensitive to little change in Ru thickness. Improving continuity of upper Co layer by slightly increasing the thickness can effectively increase the squareness of minor loop. The switching magnetization of synthetic antiferromagnetic (SAF) structure is achieved by DC current under an in-plane static magnetic field of +/- 500 Oe. This structure is very promising for free layer in spintronic application. (C) 2017 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.; By inserting an ultrathin Pt layer at Co/Ru interface, we established antiferromagnetic coupling with out-of-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering. To achieve configuration suitable for free layer, the magnetic properties of the stacks have been investigated by changing the thickness of Co, Ru and Pt layers using an orthogonal wedges technique. It is found that magnetic properties for upper Co layer thinner than 0.5 nm are sensitive to little change in Ru thickness. Improving continuity of upper Co layer by slightly increasing the thickness can effectively increase the squareness of minor loop. The switching magnetization of synthetic antiferromagnetic (SAF) structure is achieved by DC current under an in-plane static magnetic field of +/- 500 Oe. This structure is very promising for free layer in spintronic application. (C) 2017 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
部门归属	[zhao, x. t. ; zhao, y. q. ; liu, w. ; dai, z. m. ; wang, t. t. ; zhao, x. g. ; zhang, z. d.] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, liaoning, peoples r china
关键词	Tunnel-junctions Domain-structure Thin-films Torque Layer Co/ru
学科领域	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
资助者	National Natural Science Foundation of China [51590883, 51331006, 51471167]; Chinese Academy of Sciences [KJZD-EW-M05-3]
收录类别	SCI
语种	英语
WOS记录号	WOS:000430310900013
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/79334
专题	中国科学院金属研究所
通讯作者	Liu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
推荐引用方式 GB/T 7714	Zhao, XT,Zhao, YQ,Liu, W,et al. Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2018,34(5):832-835.
APA	Zhao, XT.,Zhao, YQ.,Liu, W.,Dai, ZM.,Wang, TT.,...&Liu, W .(2018).Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,34(5),832-835.
MLA	Zhao, XT,et al."Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 34.5(2018):832-835.