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Chromium- induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films
Wang, F; Zhang, HR; Jiang, J; Zhao, YF; Yu, J; Liu, W; Li, D; Chan, MHW; Sun, JR; Zhang, ZD; Chang, CZ; Liu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.; Chang, CZ (reprint author), Penn State Univ, Dept Phys, University Pk, PA 16802 USA.
2018-03-13
Source PublicationPHYSICAL REVIEW B
ISSN2469-9950
Volume97Issue:11Pages:-
AbstractTopological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTiO3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8)(2)Te-3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12DL Sn0.9Cr0.1Te film is similar to 110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12DL Sn0.9Cr0.1Te film is substantially lower than the predicted quantized value (similar to 1/4 h/e(2)). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.; Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTiO3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8)(2)Te-3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12DL Sn0.9Cr0.1Te film is similar to 110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12DL Sn0.9Cr0.1Te film is substantially lower than the predicted quantized value (similar to 1/4 h/e(2)). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.
description.department[wang, fei ; liu, wei ; li, da ; zhang, zhidong] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, liaoning, peoples r china ; [wang, fei ; jiang, jue ; zhao, yi-fan ; yu, jia ; chan, moses h. w. ; chang, cui-zu] penn state univ, dept phys, university pk, pa 16802 usa ; [wang, fei ; zhang, hongrui] univ chinese acad sci, beijing 100049, peoples r china ; [zhang, hongrui ; sun, jirong] chinese acad sci, inst phys, beijing natl lab condensed matter, beijing 100190, peoples r china
KeywordRealization State Semiconductor Epitaxy
Subject AreaPhysics, Condensed Matter
Funding OrganizationNational Natural Science Foundation of China (NSFC) [51590883, 51331006, 51771198, 11520101002]; Key Research Program of Chinese Academy of Sciences [KJZD-EW-M05-3]; State Key Program of Research and Development of China [2017YFA0206302, 2016YFA0300701]; Penn State University; Alfred P. Sloan Research Fellowship
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/79434
Collection中国科学院金属研究所
Corresponding AuthorLiu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.; Chang, CZ (reprint author), Penn State Univ, Dept Phys, University Pk, PA 16802 USA.
Recommended Citation
GB/T 7714
Wang, F,Zhang, HR,Jiang, J,et al. Chromium- induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films[J]. PHYSICAL REVIEW B,2018,97(11):-.
APA Wang, F.,Zhang, HR.,Jiang, J.,Zhao, YF.,Yu, J.,...&Chang, CZ .(2018).Chromium- induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films.PHYSICAL REVIEW B,97(11),-.
MLA Wang, F,et al."Chromium- induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films".PHYSICAL REVIEW B 97.11(2018):-.
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