| 题名: | Chromium- induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films |
| 作者: | Wang, F; Zhang, HR; Jiang, J; Zhao, YF; Yu, J; Liu, W; Li, D; Chan, MHW; Sun, JR; Zhang, ZD; Chang, CZ |
| 发表日期: | 2018-3-13 |
| 摘要: | Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTiO3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8)(2)Te-3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12DL Sn0.9Cr0.1Te film is similar to 110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12DL Sn0.9Cr0.1Te film is substantially lower than the predicted quantized value (similar to 1/4 h/e(2)). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film. |
| 刊名: | PHYSICAL REVIEW B |
| Appears in Collections: | 中国科学院金属研究所_期刊论文
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| Recommended Citation: | |
Wang, F,Zhang, HR,Jiang, J,et al. Chromium- Induced Ferromagnetism With Perpendicular Anisotropy In Topological Crystalline Insulator Snte (111) Thin Films[J]. Physical Review B,2018,97(11):-.
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