Chromium- induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films

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	Chromium- induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films
	Wang, F; Zhang, HR; Jiang, J; Zhao, YF; Yu, J; Liu, W; Li, D; Chan, MHW; Sun, JR; Zhang, ZD; Chang, CZ; Liu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.; Chang, CZ (reprint author), Penn State Univ, Dept Phys, University Pk, PA 16802 USA.
	2018-03-13
发表期刊	PHYSICAL REVIEW B
ISSN	2469-9950
卷号	97 期号:11 页码:-
摘要	Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTiO3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8)(2)Te-3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12DL Sn0.9Cr0.1Te film is similar to 110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12DL Sn0.9Cr0.1Te film is substantially lower than the predicted quantized value (similar to 1/4 h/e(2)). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.; Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTiO3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8)(2)Te-3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12DL Sn0.9Cr0.1Te film is similar to 110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12DL Sn0.9Cr0.1Te film is substantially lower than the predicted quantized value (similar to 1/4 h/e(2)). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.
部门归属	[wang, fei ; liu, wei ; li, da ; zhang, zhidong] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, liaoning, peoples r china ; [wang, fei ; jiang, jue ; zhao, yi-fan ; yu, jia ; chan, moses h. w. ; chang, cui-zu] penn state univ, dept phys, university pk, pa 16802 usa ; [wang, fei ; zhang, hongrui] univ chinese acad sci, beijing 100049, peoples r china ; [zhang, hongrui ; sun, jirong] chinese acad sci, inst phys, beijing natl lab condensed matter, beijing 100190, peoples r china
关键词	Realization State Semiconductor Epitaxy
学科领域	Physics, Condensed Matter
资助者	National Natural Science Foundation of China (NSFC) [51590883, 51331006, 51771198, 11520101002]; Key Research Program of Chinese Academy of Sciences [KJZD-EW-M05-3]; State Key Program of Research and Development of China [2017YFA0206302, 2016YFA0300701]; Penn State University; Alfred P. Sloan Research Fellowship
收录类别	SCI
语种	英语
WOS记录号	WOS:000427311200004
引用统计	被引频次：19[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/79434
专题	中国科学院金属研究所
通讯作者	Liu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.; Chang, CZ (reprint author), Penn State Univ, Dept Phys, University Pk, PA 16802 USA.
推荐引用方式 GB/T 7714	Wang, F,Zhang, HR,Jiang, J,et al. Chromium- induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films[J]. PHYSICAL REVIEW B,2018,97(11):-.
APA	Wang, F.,Zhang, HR.,Jiang, J.,Zhao, YF.,Yu, J.,...&Chang, CZ .(2018).Chromium- induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films.PHYSICAL REVIEW B,97(11),-.
MLA	Wang, F,et al."Chromium- induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films".PHYSICAL REVIEW B 97.11(2018):-.