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Creep deformation of a nickel-based single crystal superalloy under high stress at 1033 K | |
Qi, DQ; Wang, D; Du, K; Qi, Y; Lou, LH; Zhang, J; Ye, HQ; Du, K (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Wang, D (reprint author), Chinese Acad Sci, Superalloys Div, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China. | |
2018-02-25 | |
Source Publication | JOURNAL OF ALLOYS AND COMPOUNDS
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ISSN | 0925-8388 |
Volume | 735Pages:813-820 |
Abstract | The microstructure of a nickel-based single crystal superalloy has been investigated after creep deformation at 1033 K under stress up to 850 MPa. High density of stacking faults are formed in gamma' precipitates during the creep deformation. At 700 MPa and 850 MPa, bi-directional stacking faults are observed. These stacking faults are induced by the movement of a/3 < 112 > partial dislocations. Two formation mechanisms of a/3 < 112 > partial dislocations, reaction and dissociation mechanisms, are simultaneously observed in this alloy after deformation. The proportion of a/3 < 112 > dislocations formed by the dissociation mechanism increases as the applied stress increases. The primary creep strain of this alloy is 2.45% at 850 MPa, which may be attributed to the combination of these two mechanisms. (C) 2017 Elsevier B.V. All rights reserved.; The microstructure of a nickel-based single crystal superalloy has been investigated after creep deformation at 1033 K under stress up to 850 MPa. High density of stacking faults are formed in gamma' precipitates during the creep deformation. At 700 MPa and 850 MPa, bi-directional stacking faults are observed. These stacking faults are induced by the movement of a/3 < 112 > partial dislocations. Two formation mechanisms of a/3 < 112 > partial dislocations, reaction and dissociation mechanisms, are simultaneously observed in this alloy after deformation. The proportion of a/3 < 112 > dislocations formed by the dissociation mechanism increases as the applied stress increases. The primary creep strain of this alloy is 2.45% at 850 MPa, which may be attributed to the combination of these two mechanisms. (C) 2017 Elsevier B.V. All rights reserved. |
description.department | [qi, dongqing ; qi, yang ; ye, hengqiang] northeastern univ, inst mat sci & engn, shenyang 110819, liaoning, peoples r china ; [qi, dongqing ; du, kui ; zhang, jian ; ye, hengqiang] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, liaoning, peoples r china ; [wang, dong ; lou, langhong ; zhang, jian] chinese acad sci, superalloys div, inst met res, shenyang 110016, liaoning, peoples r china |
Keyword | Anisotropic Creep Stacking-faults Fracture Mechanism Gamma-phase Temperature Shearing Cmsx-4 Behavior Lattice Alloys |
Subject Area | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
Funding Organization | Natural Sciences Foundation of China [51390473, 11332010, 51101160, 51631008]; Special Funds for the Major State Basic Research Projects of China [2010CB631206] |
Indexed By | SCI |
Language | 英语 |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/79487 |
Collection | 中国科学院金属研究所 |
Corresponding Author | Du, K (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Wang, D (reprint author), Chinese Acad Sci, Superalloys Div, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China. |
Recommended Citation GB/T 7714 | Qi, DQ,Wang, D,Du, K,et al. Creep deformation of a nickel-based single crystal superalloy under high stress at 1033 K[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2018,735:813-820. |
APA | Qi, DQ.,Wang, D.,Du, K.,Qi, Y.,Lou, LH.,...&Wang, D .(2018).Creep deformation of a nickel-based single crystal superalloy under high stress at 1033 K.JOURNAL OF ALLOYS AND COMPOUNDS,735,813-820. |
MLA | Qi, DQ,et al."Creep deformation of a nickel-based single crystal superalloy under high stress at 1033 K".JOURNAL OF ALLOYS AND COMPOUNDS 735(2018):813-820. |
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