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Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions
Hu, WJ; Paudel, TR; Lopatin, S; Wang, ZH; Ma, H; Wu, KW; Bera, A; Yuan, GL; Gruverman, A; Tsymbal, EY; Wu, T; Wu, T (reprint author), King Abdullah Univ Sci & Technol, Mat Sci & Engn, Thuwal 239556900, Saudi Arabia.; Tsymbal, EY (reprint author), Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA.; Tsymbal, EY (reprint author), Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA.
2018-02-07
Source PublicationADVANCED FUNCTIONAL MATERIALS
ISSN1616-301X
Volume28Issue:6Pages:-
AbstractPersistent photoconductivity (PPC) is an intriguing physical phenomenon, where electric conduction is retained after the termination of electromagnetic radiation, which makes it appealing for applications in a wide range of opto electronic devices. So far, PPC has been observed in bulk materials and thin-film structures, where the current flows in the plane, limiting the magnitude of the effect. Here using epitaxial Nb: SrTiO3/Sm0.1Bi0.9FeO3/Pt junctions with a current-perpendicular-to-plane geometry, a colossal X-ray-induced PPC (XPPC) is achieved with a magnitude of six orders. This PPC persists for days with negligible decay. Furthermore, the pristine insulating state could be fully recovered by thermal annealing for a few minutes. Based on the electric transport and microstructure analysis, this colossal XPPC effect is attributed to the X-ray-induced formation and ionization of oxygen vacancies, which drives nonvolatile modification of atomic configurations and results in the reduction of interfacial Schottky barriers. This mechanism differs from the conventional mechanism of photon-enhanced carrier density/mobility in the current-in-plane structures. With their persistent nature, such ferroelectric/semiconductor heterojunctions open a new route toward X-ray sensing and imaging applications.; Persistent photoconductivity (PPC) is an intriguing physical phenomenon, where electric conduction is retained after the termination of electromagnetic radiation, which makes it appealing for applications in a wide range of opto electronic devices. So far, PPC has been observed in bulk materials and thin-film structures, where the current flows in the plane, limiting the magnitude of the effect. Here using epitaxial Nb: SrTiO3/Sm0.1Bi0.9FeO3/Pt junctions with a current-perpendicular-to-plane geometry, a colossal X-ray-induced PPC (XPPC) is achieved with a magnitude of six orders. This PPC persists for days with negligible decay. Furthermore, the pristine insulating state could be fully recovered by thermal annealing for a few minutes. Based on the electric transport and microstructure analysis, this colossal XPPC effect is attributed to the X-ray-induced formation and ionization of oxygen vacancies, which drives nonvolatile modification of atomic configurations and results in the reduction of interfacial Schottky barriers. This mechanism differs from the conventional mechanism of photon-enhanced carrier density/mobility in the current-in-plane structures. With their persistent nature, such ferroelectric/semiconductor heterojunctions open a new route toward X-ray sensing and imaging applications.
description.department[hu, wei jin ; wu, kewei ; bera, ashok ; wu, tom] king abdullah univ sci & technol, mat sci & engn, thuwal 239556900, saudi arabia ; [hu, wei jin] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, liaoning, peoples r china ; [paudel, tula r. ; gruverman, alexei ; tsymbal, evgeny y.] univ nebraska, dept phys & astron, lincoln, ne 68588 usa ; [paudel, tula r. ; gruverman, alexei ; tsymbal, evgeny y.] univ nebraska, nebraska ctr mat & nanosci, lincoln, ne 68588 usa ; [lopatin, sergei] kaust, imaging & characterizat core lab, thuwal 239556900, saudi arabia ; [wang, zhihong] kaust, adv nanofabricat core lab, thuwal 239556900, saudi arabia ; [ma, he ; yuan, guoliang] nanjing univ sci & technol, sch mat sci & engn, nanjing 210094, jiangsu, peoples r china
KeywordFerroelectric Tunnel-junctions Charge-ordered Manganites Augmented-wave Method Bifeo3 Thin-films Oxygen Vacancy Relaxation Electroresistance Semiconductors Zn0.3cd0.7se Percolation
Subject AreaChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
Funding OrganizationKing Abdullah University of Science and Technology (KAUST); National Science Foundation through the Nebraska Materials Research Science and Engineering Center [DMR-1420645]
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/79518
Collection中国科学院金属研究所
Corresponding AuthorWu, T (reprint author), King Abdullah Univ Sci & Technol, Mat Sci & Engn, Thuwal 239556900, Saudi Arabia.; Tsymbal, EY (reprint author), Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA.; Tsymbal, EY (reprint author), Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA.
Recommended Citation
GB/T 7714
Hu, WJ,Paudel, TR,Lopatin, S,et al. Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions[J]. ADVANCED FUNCTIONAL MATERIALS,2018,28(6):-.
APA Hu, WJ.,Paudel, TR.,Lopatin, S.,Wang, ZH.,Ma, H.,...&Tsymbal, EY .(2018).Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions.ADVANCED FUNCTIONAL MATERIALS,28(6),-.
MLA Hu, WJ,et al."Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions".ADVANCED FUNCTIONAL MATERIALS 28.6(2018):-.
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