| 一种金属氧化物多孔单晶阵列薄膜的制备方法 | |
| 刘岗; 甄超; 吴亭亭; 成会明 | |
| 2018-11-06 | |
| Rights Holder | 中国科学院金属研究所 |
| Subtype | 发明专利 |
| Patent Number | 201510349012.X |
| Document Type | 专利 |
| Identifier | http://ir.imr.ac.cn/handle/321006/80097 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | 刘岗,甄超,吴亭亭,等. 一种金属氧化物多孔单晶阵列薄膜的制备方法. 201510349012.X[P]. 2018-11-06. |
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