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Mapping gradient-driven morphological phase transition at the conductive domain walls of strained multiferroic films
Han, M. J.; Eliseev, E. A.; Morozovska, A. N.; Zhu, Y. L.; Tang, Y. L.; Wang, Y. J.; Guo, X. W.; Ma, X. L.
2019-09-11
Source PublicationPHYSICAL REVIEW B
ISSN2469-9950
Volume100Issue:10
AbstractThe coupling between antiferrodistortion (AFD) and ferroelectric (FE) polarization, universal for all tilted perovskite multiferroics, is known to strongly correlate with domain wall functionalities in the materials. The intrinsic mechanisms of domain wall phenomena, especially AFD-FE coupling-induced phenomena at the domain walls, have continued to intrigue the scientific and technological communities because of the need to develop future nanoscale electronic devices. Over the past years, theoretical studies have often shown controversial results, owing to the fact that they are neither sufficiently nor directly corroborated with experimental evidence. In this work, the AFD-FE coupling at uncharged 180 degrees and 71 degrees domain walls in BiFeO3 films is investigated by means of aberration-corrected scanning transmission electron microscopy with high-resolution scanning transmission electron microscopy and rationalized by phenomenological Landau-Ginzburg-Devonshire (LGD) theory. We reveal a peculiar morphology at the AFD-FE walls, including kinks, meandering, and trianglelike regions with opposite oxygen displacements and curvature near the interface. The LGD theory confirms that the tilt gradient energy induces these unusual morphologies and the features would change delicately with different kinds of domain walls. Moreover, the 180 degrees AFD-FE walls are proved to be conductive with an unexpected reduction of the Fe-O-Fe bond angle, which is distinct from theoretical predictions. By exploring AFD-FE coupling at the domain walls, and its induced functionalities, we provide exciting evidence into the links between structural distortions and its electronic properties, which provide great benefit for fundamental understanding of domain wall functionalities as well as functional manipulations for novel nanodevices.
Indexed BySCI
Language英语
WOS IDWOS:000485191700001
PublisherAMER PHYSICAL SOC
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/80768
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
Han, M. J.,Eliseev, E. A.,Morozovska, A. N.,et al. Mapping gradient-driven morphological phase transition at the conductive domain walls of strained multiferroic films[J]. PHYSICAL REVIEW B,2019,100(10).
APA Han, M. J..,Eliseev, E. A..,Morozovska, A. N..,Zhu, Y. L..,Tang, Y. L..,...&Ma, X. L..(2019).Mapping gradient-driven morphological phase transition at the conductive domain walls of strained multiferroic films.PHYSICAL REVIEW B,100(10).
MLA Han, M. J.,et al."Mapping gradient-driven morphological phase transition at the conductive domain walls of strained multiferroic films".PHYSICAL REVIEW B 100.10(2019).
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