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On the strength of silicon carbide particulate reinforced aluminium alloy matrix composites
Zhao, MJ; Liu, Y; Chen, LQ; Bi, J
通讯作者Zhao, MJ(mjzhao@imr.ac.cn)
2004-07-01
发表期刊JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN1005-0302
卷号20期号:4页码:451-453
摘要In the present study, the modified continuum model, quench strengthening and dislocation pile-up model was respectively used to estimate the yield strength of SiCp/Al composites. The experimental results showed that the modified shear lag model or quench strengthening model would underestimate the yield strength of SiCp/Al composites. However, the modified Hall-Petch correlation on the basis of the dislocation pile-up model, expressed as sigma(cy) = 244 + 371lambda(-1/2), fitted very well with the experimental data, which indicated that the strength increase of SiCp/Al composites might be due to the direct blocking of dislocation motion by the particulate-matrix interface. Namely, the dislocation pile-up is the most possible strengthening mechanism for SiCp/Al composites.
关键词silicon carbide particulate composites shear lag model quench strengthening model dislocation pile-up model Hall-Petch correlation
收录类别SCI
语种英语
WOS研究方向Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号WOS:000222973600022
出版者JOURNAL MATER SCI TECHNOL
引用统计
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/80883
通讯作者Zhao, MJ
作者单位Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
推荐引用方式
GB/T 7714
Zhao, MJ,Liu, Y,Chen, LQ,et al. On the strength of silicon carbide particulate reinforced aluminium alloy matrix composites[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2004,20(4):451-453.
APA Zhao, MJ,Liu, Y,Chen, LQ,&Bi, J.(2004).On the strength of silicon carbide particulate reinforced aluminium alloy matrix composites.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,20(4),451-453.
MLA Zhao, MJ,et al."On the strength of silicon carbide particulate reinforced aluminium alloy matrix composites".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 20.4(2004):451-453.
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