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Defects in GaSb studied by coincidence Doppler broadening measurements
Hu, WG; Wang, Z; Dai, YQ; Wang, SJ; Zhao, YW
Corresponding AuthorHu, WG()
2004
Source PublicationPOSITRON ANNIHILATION, ICPA-13, PROCEEDINGS
ISSN0255-5476
Volume445-6Pages:114-116
AbstractUndoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron lifetime spectroscopy (PAS) and the Doppler broadening technique. Detection sensitivity of the latter technique was improved by using a second Ge-detector for the coincident detection of the second annihilation photon. PAS measurement indicated that there were vacancies in these samples. By combining the Doppler broadening measurements, the native acceptor defects in GaSb were identified to be predominantly Ga vacancy (V(Ga)) related defects.
Keywordcoincidence Doppler broadening defects GaSb positron annihilation
Indexed BySCI
Language英语
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000189406800032
PublisherTRANS TECH PUBLICATIONS LTD
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/80893
Collection中国科学院金属研究所
Corresponding AuthorHu, WG
Affiliation1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing, Peoples R China
Recommended Citation
GB/T 7714
Hu, WG,Wang, Z,Dai, YQ,et al. Defects in GaSb studied by coincidence Doppler broadening measurements[J]. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS,2004,445-6:114-116.
APA Hu, WG,Wang, Z,Dai, YQ,Wang, SJ,&Zhao, YW.(2004).Defects in GaSb studied by coincidence Doppler broadening measurements.POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS,445-6,114-116.
MLA Hu, WG,et al."Defects in GaSb studied by coincidence Doppler broadening measurements".POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS 445-6(2004):114-116.
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