Defects in GaSb studied by coincidence Doppler broadening measurements

IMR OpenIR

	Defects in GaSb studied by coincidence Doppler broadening measurements
	Hu, WG ; Wang, Z ; Dai, YQ ; Wang, SJ ; Zhao, YW
通讯作者	Hu, WG()
	2004
发表期刊	POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS
ISSN	0255-5476
卷号	445-6 页码:114-116
摘要	Undoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron lifetime spectroscopy (PAS) and the Doppler broadening technique. Detection sensitivity of the latter technique was improved by using a second Ge-detector for the coincident detection of the second annihilation photon. PAS measurement indicated that there were vacancies in these samples. By combining the Doppler broadening measurements, the native acceptor defects in GaSb were identified to be predominantly Ga vacancy (V(Ga)) related defects.
关键词	coincidence Doppler broadening defects GaSb positron annihilation
收录类别	SCI
语种	英语
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000189406800032
出版者	TRANS TECH PUBLICATIONS LTD
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/80893
专题	中国科学院金属研究所
通讯作者	Hu, WG
作者单位	1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing, Peoples R China
推荐引用方式 GB/T 7714	Hu, WG,Wang, Z,Dai, YQ,et al. Defects in GaSb studied by coincidence Doppler broadening measurements[J]. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS,2004,445-6:114-116.
APA	Hu, WG,Wang, Z,Dai, YQ,Wang, SJ,&Zhao, YW.(2004).Defects in GaSb studied by coincidence Doppler broadening measurements.POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS,445-6,114-116.
MLA	Hu, WG,et al."Defects in GaSb studied by coincidence Doppler broadening measurements".POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS 445-6(2004):114-116.