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一种高碳高铬马氏体不锈钢及其制备方法
专利
专利类型: 发明专利, 专利号: 201810748391.3, 申请日期: 2019-11-01,
Inventors:
石全强、单以银、严伟、李艳芬、王威、杨振国、赵立君
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View/Download:2/0
  |  
Submit date:2021/03/01
纯钛表面涂层(Ca+Zn)/P 比值与成骨细胞生物活性的关系
期刊论文
上海口腔医学, 2015, 卷号: 24, 期号: 1, 页码: 46-51
Authors:
商亚微
;
张伟
;
何晶
;
王丹宁
;
钟鸣
;
赵宝红
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  |  
View/Download:1/0
  |  
Submit date:2021/02/02
微弧氧化
钛
锌
钙
磷
成骨细胞
兔下颌骨双侧种植体植入动物模型的建立
期刊论文
口腔医学研究, 2013, 期号: 5, 页码: 393-396
Authors:
封伟
;
赵宝红
;
武金明
;
商亚薇
;
张伟
;
蔺增
;
钟鸣
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View/Download:5/0
  |  
Submit date:2013/12/25
下颌骨
动物模型
纯钛
种植体
微弧氧化
KH550改性环氧树脂与碳钢间的界面附着力研究
会议论文
金陵杯第四届全国重防腐蚀与高新涂料及涂装技术研讨会论文集, 扬州, 2010-11
Authors:
赵丹
;
吴航
;
邵亚薇
;
王成
;
王福会
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View/Download:3/0
  |  
Submit date:2013/08/21
附着力
防腐涂层
环氧树脂
环氧涂层/碳钢间的界面化学键合研究
期刊论文
中国表面工程, 2010, 期号: 3, 页码: 21-24+28
Authors:
赵丹
;
吴航
;
邵亚薇
;
王路
;
王成
;
王福会
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  |  
View/Download:7/0
  |  
Submit date:2012/04/12
附着力
防腐涂层
环氧树脂
Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2005, 卷号: 8, 期号: 4, 页码: 531-535
Authors:
Zhao, YW
;
Dong, HW
;
Li, JM
;
Ling, LY
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View/Download:6/0
  |  
Submit date:2021/02/02
indium phosphide
annealing
photoluminescence
Gallium antisite defect and residual acceptors in undoped GaSb
期刊论文
PHYSICS LETTERS A, 2004, 卷号: 332, 期号: 3-4, 页码: 286-290
Authors:
Hu, WG
;
Wang, Z
;
Su, BF
;
Dai, YQ
;
Wang, SJ
;
Zhao, YW
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View/Download:11/0
  |  
Submit date:2021/02/02
GaSb
coincidence Doppler broadening
positron annihilation
defect
Annealing ambient controlled deep defect formation in InP
期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 卷号: 27, 期号: 1-3, 页码: 167-169
Authors:
Zhao, YW
;
Dong, ZY
;
Duan, ML
;
Sun, WR
;
Zeng, YP
;
Sun, NF
;
Sun, TN
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  |  
View/Download:4/0
  |  
Submit date:2021/02/02
Study on the perfection of in situ P-injection synthesis LEC-InP single crystals
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 264, 期号: 1-3, 页码: 17-20
Authors:
Zhou, XL
;
Zhao, YW
;
Sun, NF
;
Yang, GY
;
Xu, YQ
;
Sun, TN
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  |  
View/Download:9/0
  |  
Submit date:2021/02/02
etch-pit density
phosphorus-rich
PL-mapping
indium phosphide
Defects in GaSb studied by coincidence Doppler broadening measurements
期刊论文
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, 2004, 卷号: 445-6, 页码: 114-116
Authors:
Hu, WG
;
Wang, Z
;
Dai, YQ
;
Wang, SJ
;
Zhao, YW
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  |  
View/Download:12/0
  |  
Submit date:2021/02/02
coincidence Doppler broadening
defects
GaSb
positron annihilation