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一种高碳高铬马氏体不锈钢及其制备方法 专利
专利类型: 发明专利, 专利号: 201810748391.3, 申请日期: 2019-11-01,
Inventors:  石全强、单以银、严伟、李艳芬、王威、杨振国、赵立君
Favorite  |  View/Download:9/0  |  Submit date:2021/03/01
纯钛表面涂层(Ca+Zn)/P 比值与成骨细胞生物活性的关系 期刊论文
上海口腔医学, 2015, 卷号: 24, 期号: 1, 页码: 46-51
Authors:  商亚微;  张伟;  何晶;  王丹宁;  钟鸣;  赵宝红
Favorite  |  View/Download:10/0  |  Submit date:2021/02/02
微弧氧化          成骨细胞  
兔下颌骨双侧种植体植入动物模型的建立 期刊论文
口腔医学研究, 2013, 期号: 5, 页码: 393-396
Authors:  封伟;  赵宝红;  武金明;  商亚薇;  张伟;  蔺增;  钟鸣
Favorite  |  View/Download:17/0  |  Submit date:2013/12/25
下颌骨  动物模型  纯钛  种植体  微弧氧化  
KH550改性环氧树脂与碳钢间的界面附着力研究 会议论文
金陵杯第四届全国重防腐蚀与高新涂料及涂装技术研讨会论文集, 扬州, 2010-11
Authors:  赵丹;  吴航;  邵亚薇;  王成;  王福会
Favorite  |  View/Download:9/0  |  Submit date:2013/08/21
附着力  防腐涂层  环氧树脂  
环氧涂层/碳钢间的界面化学键合研究 期刊论文
中国表面工程, 2010, 期号: 3, 页码: 21-24+28
Authors:  赵丹;  吴航;  邵亚薇;  王路;  王成;  王福会
Favorite  |  View/Download:13/0  |  Submit date:2012/04/12
附着力  防腐涂层  环氧树脂  
Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2005, 卷号: 8, 期号: 4, 页码: 531-535
Authors:  Zhao, YW;  Dong, HW;  Li, JM;  Ling, LY
Favorite  |  View/Download:22/0  |  Submit date:2021/02/02
indium phosphide  annealing  photoluminescence  
Gallium antisite defect and residual acceptors in undoped GaSb 期刊论文
PHYSICS LETTERS A, 2004, 卷号: 332, 期号: 3-4, 页码: 286-290
Authors:  Hu, WG;  Wang, Z;  Su, BF;  Dai, YQ;  Wang, SJ;  Zhao, YW
Favorite  |  View/Download:38/0  |  Submit date:2021/02/02
GaSb  coincidence Doppler broadening  positron annihilation  defect  
Annealing ambient controlled deep defect formation in InP 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 卷号: 27, 期号: 1-3, 页码: 167-169
Authors:  Zhao, YW;  Dong, ZY;  Duan, ML;  Sun, WR;  Zeng, YP;  Sun, NF;  Sun, TN
Favorite  |  View/Download:17/0  |  Submit date:2021/02/02
Study on the perfection of in situ P-injection synthesis LEC-InP single crystals 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 264, 期号: 1-3, 页码: 17-20
Authors:  Zhou, XL;  Zhao, YW;  Sun, NF;  Yang, GY;  Xu, YQ;  Sun, TN
Favorite  |  View/Download:39/0  |  Submit date:2021/02/02
etch-pit density  phosphorus-rich  PL-mapping  indium phosphide  
Defects in GaSb studied by coincidence Doppler broadening measurements 期刊论文
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, 2004, 卷号: 445-6, 页码: 114-116
Authors:  Hu, WG;  Wang, Z;  Dai, YQ;  Wang, SJ;  Zhao, YW
Favorite  |  View/Download:39/0  |  Submit date:2021/02/02
coincidence Doppler broadening  defects  GaSb  positron annihilation