Annealing ambient controlled deep defect formation in InP

doi:10.1051/epjap:2004096

IMR OpenIR

	Annealing ambient controlled deep defect formation in InP
	Zhao, YW ; Dong, ZY ; Duan, ML ; Sun, WR ; Zeng, YP ; Sun, NF ; Sun, TN
通讯作者	Zhao, YW(zhaoyw@red.semi.ac.nc)
	2004-07-01
发表期刊	EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN	1286-0042
卷号	27 期号:1-3 页码:167-169
摘要	Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.
DOI	10.1051/epjap:2004096
收录类别	SCI
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000224559500033
出版者	E D P SCIENCES
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/81928
专题	中国科学院金属研究所
通讯作者	Zhao, YW
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Hebei Semicond Res Inst, Shijiazhuang 050051, Hebei, Peoples R China
推荐引用方式 GB/T 7714	Zhao, YW,Dong, ZY,Duan, ML,et al. Annealing ambient controlled deep defect formation in InP[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2004,27(1-3):167-169.
APA	Zhao, YW.,Dong, ZY.,Duan, ML.,Sun, WR.,Zeng, YP.,...&Sun, TN.(2004).Annealing ambient controlled deep defect formation in InP.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,27(1-3),167-169.
MLA	Zhao, YW,et al."Annealing ambient controlled deep defect formation in InP".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 27.1-3(2004):167-169.