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Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films
Zhang, Anqi; Wei, Feng; Yan, Chenhui; Wang, Fei; Ma, Song; Zhang, Zhidong
2019-07-05
Source PublicationNANOTECHNOLOGY
ISSN0957-4484
Volume30Issue:27
AbstractWe report the magneotransport studies on the topological crystalline insulator (TCI) Pb1-xSnxTe (111) single crystal thin films grown by molecular beam epitaxy. By decreasing Sn content, an enhanced sheet resistance and decreased hole density are observed in Pb1-xSnxTe (111) thin films A weak antilocalization likely related to the topological surface states is observed in transport of Pb1-xSnxTe (x > 0.4) thin films, whereas a weak localization is displayed in Pb1-xSnxTe (x < 0.4) thin films This tunable weak antilocalization to weak localization transition is attributed to the open of Dirac gap because of the topological phase transition in TCI Pb1-xSnxTe. Our research has a potential application in the tunable electronic and spintronic devices and is very significant to the fundamental research based on TCI Pb1-xSnxTe thin film.
Keywordtopological crystalline insulator Pb1-xSnxTe (111) topological phase transition weak antilocalization weak localization
Indexed BySCI
Language英语
WOS IDWOS:000465893800001
PublisherIOP PUBLISHING LTD
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/80925
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
Zhang, Anqi,Wei, Feng,Yan, Chenhui,et al. Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films[J]. NANOTECHNOLOGY,2019,30(27).
APA Zhang, Anqi,Wei, Feng,Yan, Chenhui,Wang, Fei,Ma, Song,&Zhang, Zhidong.(2019).Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films.NANOTECHNOLOGY,30(27).
MLA Zhang, Anqi,et al."Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films".NANOTECHNOLOGY 30.27(2019).
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