| Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures | |
| Han, Yu1; Wu, Zefei1; Xu, Shuigang1; Chen, Xiaolong1; Wang, Lin1; Wang, Yang1; Xiong, Wei1; Han, Tianyi1; Ye, Weiguang1; Lin, Jiangxiazi1; Cai, Yuan1; Ho, Kin Ming1; He, Yuheng1; Su, Dangsheng2; Wang, Ning1 | |
| 通讯作者 | Han, Yu() |
| 2015-05-22 | |
| 发表期刊 | ADVANCED MATERIALS INTERFACES
 |
| ISSN | 2196-7350 |
| 卷号 | 2期号:8页码:6 |
| 摘要 | Crystalline defects in MoS2 may induce midgap states, resulting in low carrier mobility. These midgap states are usually difficult to probe by conventional transport measurement. The quantum capacitance of single-layer graphene is sensitive to defect-induced states near the Dirac point, at which the density of states is extremely low. It is reported that the hexagonal-boron nitride/graphene/MoS2 sandwich structure facilitates the exploration of the properties of those midgap states in MoS2. Comparative results of the quantum capacitance of pristine graphene indicate the presence of several midgap states with distinct features. Some of these states donate electrons while some states lead to localization of electrons. It is believed that these midgap states originate from intrinsic point defects such as sulfur vacancies, which have a significant impact on the property of the MoS2/graphene interface. They are responsible for the contact problems of metal/MoS2 interfaces. |
| 关键词 | defects graphene heterostructure midgap states MoS2 quantum capacitance |
| 资助者 | Research Grants Council of Hong Kong ; Research Grants Council of Hong Kong (HKUST-SRFI) ; Raith-HKUST Nanotechnology Laboratory |
| DOI | 10.1002/admi.201500064 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 资助项目 | Research Grants Council of Hong Kong[N_HKUST613/12] ; Research Grants Council of Hong Kong[604112] ; Research Grants Council of Hong Kong[HKU9/CRF/13G] ; Research Grants Council of Hong Kong[HKUST9/CRF/08] ; Research Grants Council of Hong Kong (HKUST-SRFI) ; Raith-HKUST Nanotechnology Laboratory[SEG_HKUST08] |
| WOS研究方向 | Chemistry ; Materials Science |
| WOS类目 | Chemistry, Multidisciplinary ; Materials Science, Multidisciplinary |
| WOS记录号 | WOS:000355234600006 |
| 出版者 | WILEY-BLACKWELL |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.imr.ac.cn/handle/321006/81096 |
| 通讯作者 | Han, Yu |
| 作者单位 | 1.Hong Kong Univ Sci Technol, William Mong Inst Nano Sci Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China |
| 推荐引用方式 GB/T 7714 | Han, Yu,Wu, Zefei,Xu, Shuigang,et al. Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures[J]. ADVANCED MATERIALS INTERFACES,2015,2(8):6. |
| APA | Han, Yu.,Wu, Zefei.,Xu, Shuigang.,Chen, Xiaolong.,Wang, Lin.,...&Wang, Ning.(2015).Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures.ADVANCED MATERIALS INTERFACES,2(8),6. |
| MLA | Han, Yu,et al."Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures".ADVANCED MATERIALS INTERFACES 2.8(2015):6. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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