| Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures | |
| Han, Yu1; Wu, Zefei1; Xu, Shuigang1; Chen, Xiaolong1; Wang, Lin1; Wang, Yang1; Xiong, Wei1; Han, Tianyi1; Ye, Weiguang1; Lin, Jiangxiazi1; Cai, Yuan1; Ho, Kin Ming1; He, Yuheng1; Su, Dangsheng2; Wang, Ning1 | |
| Corresponding Author | Han, Yu() |
| 2015-05-22 | |
| Source Publication | ADVANCED MATERIALS INTERFACES
 |
| ISSN | 2196-7350 |
| Volume | 2Issue:8Pages:6 |
| Abstract | Crystalline defects in MoS2 may induce midgap states, resulting in low carrier mobility. These midgap states are usually difficult to probe by conventional transport measurement. The quantum capacitance of single-layer graphene is sensitive to defect-induced states near the Dirac point, at which the density of states is extremely low. It is reported that the hexagonal-boron nitride/graphene/MoS2 sandwich structure facilitates the exploration of the properties of those midgap states in MoS2. Comparative results of the quantum capacitance of pristine graphene indicate the presence of several midgap states with distinct features. Some of these states donate electrons while some states lead to localization of electrons. It is believed that these midgap states originate from intrinsic point defects such as sulfur vacancies, which have a significant impact on the property of the MoS2/graphene interface. They are responsible for the contact problems of metal/MoS2 interfaces. |
| Keyword | defects graphene heterostructure midgap states MoS2 quantum capacitance |
| Funding Organization | Research Grants Council of Hong Kong ; Research Grants Council of Hong Kong (HKUST-SRFI) ; Raith-HKUST Nanotechnology Laboratory |
| DOI | 10.1002/admi.201500064 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Research Grants Council of Hong Kong[N_HKUST613/12] ; Research Grants Council of Hong Kong[604112] ; Research Grants Council of Hong Kong[HKU9/CRF/13G] ; Research Grants Council of Hong Kong[HKUST9/CRF/08] ; Research Grants Council of Hong Kong (HKUST-SRFI) ; Raith-HKUST Nanotechnology Laboratory[SEG_HKUST08] |
| WOS Research Area | Chemistry ; Materials Science |
| WOS Subject | Chemistry, Multidisciplinary ; Materials Science, Multidisciplinary |
| WOS ID | WOS:000355234600006 |
| Publisher | WILEY-BLACKWELL |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/81096 |
| Corresponding Author | Han, Yu |
| Affiliation | 1.Hong Kong Univ Sci Technol, William Mong Inst Nano Sci Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China |
| Recommended Citation GB/T 7714 | Han, Yu,Wu, Zefei,Xu, Shuigang,et al. Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures[J]. ADVANCED MATERIALS INTERFACES,2015,2(8):6. |
| APA | Han, Yu.,Wu, Zefei.,Xu, Shuigang.,Chen, Xiaolong.,Wang, Lin.,...&Wang, Ning.(2015).Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures.ADVANCED MATERIALS INTERFACES,2(8),6. |
| MLA | Han, Yu,et al."Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures".ADVANCED MATERIALS INTERFACES 2.8(2015):6. |
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