High temperature scaling of Ni-15Cu-5Al alloy in 1 X 10(5) Pa pure oxygen

IMR OpenIR

	High temperature scaling of Ni-15Cu-5Al alloy in 1 X 10(5) Pa pure oxygen
	Xiang, JH ; Niu, Y ; Wu, WT
通讯作者	Xiang, JH(jhxiang@imr.ac.cn)
	2004-12-01
发表期刊	JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY
ISSN	1005-9784
卷号	11 期号:4 页码:348-352
摘要	The oxidation of the ternary alloy Ni-15Cu-5Al in 1 X 10(5) Pa pure oxygen at 700 degreesC and 800 degreesC was studied. The results show that the behavior of the Ni-rich alloy is similar to that of the binary Ni-Al alloy with the same Al content in the form of an external NiO layer coupled to the internal oxidation of aluminium. The presence of 15 % (mole fraction) Cu cannot modify substantially the values of relevant parameters affecting the transition from the internal to the external oxidation of aluminium. The presence of 5 % Al reduces the oxidation rate of the corresponding Ni-Cu alloy during the whole oxidation stages, though 5 % Al is still insufficient to form protective external alumina scales.
关键词	Ni-rich alloy high temperature oxidation ternary alloy
收录类别	SCI
语种	英语
WOS研究方向	Metallurgy & Metallurgical Engineering
WOS类目	Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000226187200002
出版者	JOURNAL OF CENTRAL SOUTH UNIV TECHNOLOGY
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/81461
通讯作者	Xiang, JH
作者单位	1.Chinese Acad Sci, State Key Lab Corros & Protect, Inst Met Res, Shenyang 110016, Peoples R China 2.Jiangxi Sci & Technol Normal Univ, Dept Appl Phys, Nanchang 330013, Peoples R China
推荐引用方式 GB/T 7714	Xiang, JH,Niu, Y,Wu, WT. High temperature scaling of Ni-15Cu-5Al alloy in 1 X 10(5) Pa pure oxygen[J]. JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY,2004,11(4):348-352.
APA	Xiang, JH,Niu, Y,&Wu, WT.(2004).High temperature scaling of Ni-15Cu-5Al alloy in 1 X 10(5) Pa pure oxygen.JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY,11(4),348-352.
MLA	Xiang, JH,et al."High temperature scaling of Ni-15Cu-5Al alloy in 1 X 10(5) Pa pure oxygen".JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY 11.4(2004):348-352.