Low-temperature switching fatigue behavior of ferroelectric SrBi2Ta2O9 thin films

doi:10.1063/1.1644056

IMR OpenIR

	Low-temperature switching fatigue behavior of ferroelectric SrBi2Ta2O9 thin films
	Yuan, GL ; Liu, JM ; Zhang, ST ; Wu, D ; Wang, YP ; Liu, ZG ; Chan, HLW ; Choy, CL
通讯作者	Liu, JM()
	2004-02-09
发表期刊	APPLIED PHYSICS LETTERS
ISSN	0003-6951
卷号	84 期号:6 页码:954-956
摘要	The ferroelectric hysteresis and fatigue behavior over a wide temperature range from 290 to 50 K for SrBi2Ta2O9 thin films with Pt electrodes on silicon substrates, prepared by metalorganic decomposition (MOD) and pulsed-laser deposition (PLD), are investigated. It is found that given a fixed electrical field amplitude, the coercivity of all films increases with decreasing temperature T. The saturated hysteresis loop easily obtained for the MOD-prepared thin films has its remnant polarization enhanced with decreasing T, but the PLD-prepared samples exhibit minor loops whose remnant polarization decays with decreasing T. While the films prepared by MOD exhibit improved fatigue resistance at low T, significant fatigue effect at low T is observed for the films prepared by PLD. Although we cannot rule out the effect of strain, the experimental results can be explained by competition between pinning and depinning of domain walls, which are dependent of temperature and defect charges. (C) 2004 American Institute of Physics.
DOI	10.1063/1.1644056
收录类别	SCI
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000188763800040
出版者	AMER INST PHYSICS
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/81490
通讯作者	Liu, JM
作者单位	1.Nanjing Univ, Solid State Microstruct Lab, Nanjing 210093, Peoples R China 2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang, Peoples R China 3.Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Yuan, GL,Liu, JM,Zhang, ST,et al. Low-temperature switching fatigue behavior of ferroelectric SrBi2Ta2O9 thin films[J]. APPLIED PHYSICS LETTERS,2004,84(6):954-956.
APA	Yuan, GL.,Liu, JM.,Zhang, ST.,Wu, D.,Wang, YP.,...&Choy, CL.(2004).Low-temperature switching fatigue behavior of ferroelectric SrBi2Ta2O9 thin films.APPLIED PHYSICS LETTERS,84(6),954-956.
MLA	Yuan, GL,et al."Low-temperature switching fatigue behavior of ferroelectric SrBi2Ta2O9 thin films".APPLIED PHYSICS LETTERS 84.6(2004):954-956.