| Molecular dynamics studies on vacancy movement in crystalline silicon | |
| Qiao, YH; Wang, SQ | |
| Corresponding Author | Wang, SQ() |
| 2005-03-11 | |
| Source Publication | ACTA METALLURGICA SINICA
 |
| ISSN | 0412-1961 |
| Volume | 41Issue:3Pages:231-234 |
| Abstract | A molecular dynamics (MD) simulations was performed to study the thermodynamic behavior of vacancies in crystalline silicon. In the simulation, we adopt the Stillinger-Weber potential used commonly for silicon to describe the interaction between atoms. Two kinds of methods were employed to trace the jump of a vacancy, and its activation energy in the crystal was also calculated. The statistic explanation of the definition of vacancy jump proposed by Thomas was given. Besides, we find that most of vacancy jumps are performed passing through a metastable state. |
| Keyword | Si crystal vacancy migration energy molecular dynamics diffusion |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Metallurgy & Metallurgical Engineering |
| WOS Subject | Metallurgy & Metallurgical Engineering |
| WOS ID | WOS:000228107800002 |
| Publisher | SCIENCE CHINA PRESS |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/83037 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Wang, SQ |
| Affiliation | Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China |
| Recommended Citation GB/T 7714 | Qiao, YH,Wang, SQ. Molecular dynamics studies on vacancy movement in crystalline silicon[J]. ACTA METALLURGICA SINICA,2005,41(3):231-234. |
| APA | Qiao, YH,&Wang, SQ.(2005).Molecular dynamics studies on vacancy movement in crystalline silicon.ACTA METALLURGICA SINICA,41(3),231-234. |
| MLA | Qiao, YH,et al."Molecular dynamics studies on vacancy movement in crystalline silicon".ACTA METALLURGICA SINICA 41.3(2005):231-234. |
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