Approach for defect suppression and preparation of high quality semi-insulating InP

doi:10.1016/j.jcrysgro.2004.11.007

IMR OpenIR

	Approach for defect suppression and preparation of high quality semi-insulating InP
	Zhao, Y. W.; Dong, Z. Y.; Li, Ch. J.
通讯作者	Zhao, Y. W.(zhaoyw@red.semi.ac.cn)
	2005-02-15
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	275 期号:1-2 页码:E381-E385
摘要	Semi-insulating (SI) InP materials have been prepared via Fe-dopingin liquid encapsulated Czochraski growth and high temperature annealing undoped InP, respectively. The SI-InP materials exhibit different electrical properties and thermal stability. Deep level defects in the material have been studied in order to understand the mechanism. It is found that the quality of SI-InP depends on the concentration of deep level defects with energy levels in the range of 0.1-0.4 eV within the band gap. SI-InP with negligible low concentration of the defects exhibits high mobility and good thermal stability. Fe-diffused SI-InP which is obtained by annealingin iron phosphide ambient contains very low concentration of the defects. The origin of the defects has been studied by comparing the influence of the Fe incorporation method and stoichiometry on the defects formation in the SI-InP materials. The results suggest an approach for an improvement of the growth of high quality SI-InP material. (C) 2004 Elsevier B. V. All rights reserved.
关键词	Point defects Liquid encapsulated Czochralski Indium phosphide Semi-insulating III-V materials
资助者	K.C. Wong Education Foundation, Hong Kong ; National Natural Science Foundation
DOI	10.1016/j.jcrysgro.2004.11.007
收录类别	SCI
语种	英语
资助项目	K.C. Wong Education Foundation, Hong Kong ; National Natural Science Foundation[10375043]
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000208324600059
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/85094
专题	中国科学院金属研究所
通讯作者	Zhao, Y. W.
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Y. W.,Dong, Z. Y.,Li, Ch. J.. Approach for defect suppression and preparation of high quality semi-insulating InP[J]. JOURNAL OF CRYSTAL GROWTH,2005,275(1-2):E381-E385.
APA	Zhao, Y. W.,Dong, Z. Y.,&Li, Ch. J..(2005).Approach for defect suppression and preparation of high quality semi-insulating InP.JOURNAL OF CRYSTAL GROWTH,275(1-2),E381-E385.
MLA	Zhao, Y. W.,et al."Approach for defect suppression and preparation of high quality semi-insulating InP".JOURNAL OF CRYSTAL GROWTH 275.1-2(2005):E381-E385.