IMR OpenIR
Study of defects and electron densities in TiAl alloy doped with V and Ag by positron annihilation
Deng, W; Zhu, YY; Zhou, YN; Huang, YY; Cao, MZ; Xiong, LY
Corresponding AuthorDeng, W()
2006-03-01
Source PublicationRARE METAL MATERIALS AND ENGINEERING
ISSN1002-185X
Volume35Issue:3Pages:348-351
AbstractPositron lifetime spectra of Ti50Al50, Ti50Al48V2, Ti50Al48Ag2 alloys and annealed Ti, Al, Ag, V metals were measured. The electron densities in the bulk and defects of the alloys were calculated by positron lifetime parameters. The poor ductility of binary TiAl alloy is related to low free electron densities in the bulk and the grain boundaries of the alloy. When V are added into Ti-rich TiAl alloy, V atoms will provide more free electrons than both Al and Ti atoms to participate in metallic bonds, thus increasing the electron densities in the bulk and the grain boundary simultaneously. Ag additions appear to have an effect similar to V additions. Both V and Ag are benefit elements in enhancing the ductility of TiAl alloys.
KeywordTiAl alloy electron density microdefect positron annihilation
Indexed BySCI
Language英语
WOS Research AreaMaterials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000236600300004
PublisherNORTHWEST INST NONFERROUS METAL RESEARCH
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/88468
Collection中国科学院金属研究所
Corresponding AuthorDeng, W
Affiliation1.Guangxi Univ, Dept Phys, Nanning 530004, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
3.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Deng, W,Zhu, YY,Zhou, YN,et al. Study of defects and electron densities in TiAl alloy doped with V and Ag by positron annihilation[J]. RARE METAL MATERIALS AND ENGINEERING,2006,35(3):348-351.
APA Deng, W,Zhu, YY,Zhou, YN,Huang, YY,Cao, MZ,&Xiong, LY.(2006).Study of defects and electron densities in TiAl alloy doped with V and Ag by positron annihilation.RARE METAL MATERIALS AND ENGINEERING,35(3),348-351.
MLA Deng, W,et al."Study of defects and electron densities in TiAl alloy doped with V and Ag by positron annihilation".RARE METAL MATERIALS AND ENGINEERING 35.3(2006):348-351.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Deng, W]'s Articles
[Zhu, YY]'s Articles
[Zhou, YN]'s Articles
Baidu academic
Similar articles in Baidu academic
[Deng, W]'s Articles
[Zhu, YY]'s Articles
[Zhou, YN]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Deng, W]'s Articles
[Zhu, YY]'s Articles
[Zhou, YN]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.