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Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate
Cui Jun-Peng1,2; Wang Xiao-Feng1,2; Duan Yao1,2; He Jin-Xiao1,2; Zeng Yi-Ping1,2
Corresponding AuthorCui Jun-Peng()
2008-06-01
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume25Issue:6Pages:2277-2280
AbstractA 5.35-mu m-thick ZnO film is grown by chemical vapour deposition technique on a sapphire (0001) substrate with a GaN buffer layer. The surface of the ZnO film is smooth and shows many hexagonal features. The full width at half maximum of ZnO (0002) omega-rocking curve is 161 arcsec, corresponding to a high crystal quality of the ZnO film. From the result of x-ray diffraction theta - 2. scanning, the stress status in ZnO film is tensile, which is supported by Raman scattering measurement. The reason of the tensile stress in the ZnO film is analysed in detail. The lattice mismatch and thermal mismatch are excluded and the reason is attributed to the coalescence of grains or islands during the growth of the ZnO film.
Indexed BySCI
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Multidisciplinary
WOS IDWOS:000256252600097
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/93180
Collection中国科学院金属研究所
Corresponding AuthorCui Jun-Peng
Affiliation1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Cui Jun-Peng,Wang Xiao-Feng,Duan Yao,et al. Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate[J]. CHINESE PHYSICS LETTERS,2008,25(6):2277-2280.
APA Cui Jun-Peng,Wang Xiao-Feng,Duan Yao,He Jin-Xiao,&Zeng Yi-Ping.(2008).Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate.CHINESE PHYSICS LETTERS,25(6),2277-2280.
MLA Cui Jun-Peng,et al."Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate".CHINESE PHYSICS LETTERS 25.6(2008):2277-2280.
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