| Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate | |
| Cui Jun-Peng1,2; Wang Xiao-Feng1,2; Duan Yao1,2; He Jin-Xiao1,2; Zeng Yi-Ping1,2 | |
| Corresponding Author | Cui Jun-Peng() |
| 2008-06-01 | |
| Source Publication | CHINESE PHYSICS LETTERS
 |
| ISSN | 0256-307X |
| Volume | 25Issue:6Pages:2277-2280 |
| Abstract | A 5.35-mu m-thick ZnO film is grown by chemical vapour deposition technique on a sapphire (0001) substrate with a GaN buffer layer. The surface of the ZnO film is smooth and shows many hexagonal features. The full width at half maximum of ZnO (0002) omega-rocking curve is 161 arcsec, corresponding to a high crystal quality of the ZnO film. From the result of x-ray diffraction theta - 2. scanning, the stress status in ZnO film is tensile, which is supported by Raman scattering measurement. The reason of the tensile stress in the ZnO film is analysed in detail. The lattice mismatch and thermal mismatch are excluded and the reason is attributed to the coalescence of grains or islands during the growth of the ZnO film. |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Physics |
| WOS Subject | Physics, Multidisciplinary |
| WOS ID | WOS:000256252600097 |
| Publisher | IOP PUBLISHING LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/93180 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Cui Jun-Peng |
| Affiliation | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Cui Jun-Peng,Wang Xiao-Feng,Duan Yao,et al. Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate[J]. CHINESE PHYSICS LETTERS,2008,25(6):2277-2280. |
| APA | Cui Jun-Peng,Wang Xiao-Feng,Duan Yao,He Jin-Xiao,&Zeng Yi-Ping.(2008).Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate.CHINESE PHYSICS LETTERS,25(6),2277-2280. |
| MLA | Cui Jun-Peng,et al."Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate".CHINESE PHYSICS LETTERS 25.6(2008):2277-2280. |
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