Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate

IMR OpenIR

	Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate
	Cui Jun-Peng 1,2; Wang Xiao-Feng 1,2; Duan Yao 1,2; He Jin-Xiao 1,2; Zeng Yi-Ping 1,2
通讯作者	Cui Jun-Peng()
	2008-06-01
发表期刊	CHINESE PHYSICS LETTERS
ISSN	0256-307X
卷号	25 期号:6 页码:2277-2280
摘要	A 5.35-mu m-thick ZnO film is grown by chemical vapour deposition technique on a sapphire (0001) substrate with a GaN buffer layer. The surface of the ZnO film is smooth and shows many hexagonal features. The full width at half maximum of ZnO (0002) omega-rocking curve is 161 arcsec, corresponding to a high crystal quality of the ZnO film. From the result of x-ray diffraction theta - 2. scanning, the stress status in ZnO film is tensile, which is supported by Raman scattering measurement. The reason of the tensile stress in the ZnO film is analysed in detail. The lattice mismatch and thermal mismatch are excluded and the reason is attributed to the coalescence of grains or islands during the growth of the ZnO film.
收录类别	SCI
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000256252600097
出版者	IOP PUBLISHING LTD
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/93180
专题	中国科学院金属研究所
通讯作者	Cui Jun-Peng
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Cui Jun-Peng,Wang Xiao-Feng,Duan Yao,et al. Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate[J]. CHINESE PHYSICS LETTERS,2008,25(6):2277-2280.
APA	Cui Jun-Peng,Wang Xiao-Feng,Duan Yao,He Jin-Xiao,&Zeng Yi-Ping.(2008).Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate.CHINESE PHYSICS LETTERS,25(6),2277-2280.
MLA	Cui Jun-Peng,et al."Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate".CHINESE PHYSICS LETTERS 25.6(2008):2277-2280.