Growth of GaN single crystals by Ca3N2 flux

doi:10.1016/j.scriptamat.2007.09.027

IMR OpenIR

	Growth of GaN single crystals by Ca3N2 flux
	Wang, G.1; Yuan, W. X.2; Jian, J. K.3; Bao, H. Q.1; Wang, J. F.2; Chen, X. L.1; Liang, J. K.1,4
通讯作者	Chen, X. L.(chenx29@aphy.iphy.ac.cn)
	2008-02-01
发表期刊	SCRIPTA MATERIALIA
ISSN	1359-6462
卷号	58 期号:4 页码:319-322
摘要	This paper reports recent progress on GaN single crystal growth by Ca3N2 flux. The isothermal phase diagrams of the Ca-Ga-N system were predicted from the corresponding binary systems by CALPHAD. Well-crystallized GaN crystals up to 1.5 mm were grown from the Ca-Ga-N system at 900 degrees C under 0.2 MPa N-2 pressure. It was found that the crystal size depended on the molar ratio of starting materials, the temperature and the duration of growth. A growth mechanism involving two-step reactions is proposed. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
关键词	CALPHAD single crystal growth nitride
DOI	10.1016/j.scriptamat.2007.09.027
收录类别	SCI
语种	英语
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000251806500020
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：6[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/93362
专题	中国科学院金属研究所
通讯作者	Chen, X. L.
作者单位	1.Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China 2.Univ Sci & Technol Beijing, Dept Chem, Sch Appl Sci, Beijing 100083, Peoples R China 3.Xinjiang Univ, Dept Phys, Urumqi 830046, Peoples R China 4.Acad Sinica, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Wang, G.,Yuan, W. X.,Jian, J. K.,et al. Growth of GaN single crystals by Ca3N2 flux[J]. SCRIPTA MATERIALIA,2008,58(4):319-322.
APA	Wang, G..,Yuan, W. X..,Jian, J. K..,Bao, H. Q..,Wang, J. F..,...&Liang, J. K..(2008).Growth of GaN single crystals by Ca3N2 flux.SCRIPTA MATERIALIA,58(4),319-322.
MLA	Wang, G.,et al."Growth of GaN single crystals by Ca3N2 flux".SCRIPTA MATERIALIA 58.4(2008):319-322.