| Effect of CO on characteristics of AlGaN/GaN Schottky diode | |
| Feng Chun1; Wang Xiao-Liang; Yang Cui-Bai; Xiao Hong-Ling; Zhang Ming-Lan; Jiang Li-Juan; Tang Jian; Hu Guo-Xin; Wang Jun-Xi; Wang Zhan-Guo | |
| 通讯作者 | Feng Chun(cfeng@semi.ac.cn) |
| 2008-08-01 | |
| 发表期刊 | CHINESE PHYSICS LETTERS
 |
| ISSN | 0256-307X |
| 卷号 | 25期号:8页码:3025-3027 |
| 摘要 | Pt Schottky diode gas sensors for CO are fabricated using AlGaN/ GaN high electron mobility transistor ( HEMTs) structure. The diodes show a remarkable sensor signal (3 mA, in N(2); 2mA in air ambient) biased 2V after 1% CO is introduced at 50 degrees C. The Schottky barrier heights decrease for 36meV and 27meV in the two cases respectively. The devices exhibit a slow recovery characteristic in air ambient but almost none in the background of pure N2, which reveals that oxygen molecules could accelerate the desorption of CO and offer restrictions to CO detection. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| WOS记录号 | WOS:000258018300078 |
| 出版者 | IOP PUBLISHING LTD |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.imr.ac.cn/handle/321006/94470 |
| 专题 | 中国科学院金属研究所 |
| 通讯作者 | Feng Chun |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Feng Chun,Wang Xiao-Liang,Yang Cui-Bai,et al. Effect of CO on characteristics of AlGaN/GaN Schottky diode[J]. CHINESE PHYSICS LETTERS,2008,25(8):3025-3027. |
| APA | Feng Chun.,Wang Xiao-Liang.,Yang Cui-Bai.,Xiao Hong-Ling.,Zhang Ming-Lan.,...&Wang Zhan-Guo.(2008).Effect of CO on characteristics of AlGaN/GaN Schottky diode.CHINESE PHYSICS LETTERS,25(8),3025-3027. |
| MLA | Feng Chun,et al."Effect of CO on characteristics of AlGaN/GaN Schottky diode".CHINESE PHYSICS LETTERS 25.8(2008):3025-3027. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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