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Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum
Lin, Jian; Ma, Dongge
Corresponding AuthorLin, Jian()
2008-06-15
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume103Issue:12Pages:4
AbstractNegative differential resistance (NDR) and memory phenomenon have been realized in current-voltage (I-V) characteristics of indium tin oxide/tris(8-hydroxyquinoline) aluminum/aluminum devices. The I-V curves have been divided into three operational regions that are associated with different working regimes of the devices: (i) bistable region, (ii) NDR region, and (iii) monotonic region. The bistable region disappeared after a couple of voltage sweeps from zero to a positive voltage. The bistable nature can be reinstated by applying a suitable negative voltage. The I-V characteristics have been explained in terms of space charge limited conduction. It has been found that injection of holes in these devices play an important role in NDR and resistive switching processes. Formation of nanofilamentary pathways and space charge field inhibition of injection elucidate the observed phenomenon well. (C) 2008 American Institute of Physics.
DOI10.1063/1.2942396
Indexed BySCI
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000257284100108
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:36[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/95350
Collection中国科学院金属研究所
Corresponding AuthorLin, Jian
AffiliationChinese Acad Sci, Grad Sch Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
Recommended Citation
GB/T 7714
Lin, Jian,Ma, Dongge. Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum[J]. JOURNAL OF APPLIED PHYSICS,2008,103(12):4.
APA Lin, Jian,&Ma, Dongge.(2008).Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum.JOURNAL OF APPLIED PHYSICS,103(12),4.
MLA Lin, Jian,et al."Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum".JOURNAL OF APPLIED PHYSICS 103.12(2008):4.
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