The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2

doi:10.1016/j.intermet.2009.04.002

IMR OpenIR

	The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2
	Chen, Y. C.1; Xu, J.2; Fan, X. H.3; Zhang, X. F.1; Han, L.1; Lin, D. Y.; Li, Q. H.; Uher, C.4
通讯作者	Chen, Y. C.(matscichen@hotmail.com)
	2009-11-01
发表期刊	INTERMETALLICS
ISSN	0966-9795
卷号	17 期号:11 页码:920-926
摘要	The as yet unresolved microstructure of the periodic layers formed in the reactive diffusion system Mg/SiO2 was clarified by using high-resolution field-emission SEM. The periodic layered structure actually consists of the single-phase layer of Mg2Si and the two-phase layer of (Mg2Si + MgO) alternated within the reaction zone. According to the experimental observations and in line with the diffusion-induced stresses model, the mechanism controlling this phenomenon could be attributed to the stresses induced by the difference in interface growth rates of Mg2Si and MgO phases within the layer. When the elastic deformation of the slow-growing aggregated-MgO phase reaches its elastic maximum, it will be split off from the reaction front by the neighboring Mg2Si phase and a new periodic layer forms. The computer simulation results are coinciding well with the experimental data. (C) 2009 Elsevier Ltd. All rights reserved.
关键词	Composites, based on the intermetallics matrix Nanostructured intermetallics Diffusion Microstructure Thermoelectric power generation
资助者	National Science Foundation of China
DOI	10.1016/j.intermet.2009.04.002
收录类别	SCI
语种	英语
资助项目	National Science Foundation of China[50601016]
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000269164600007
出版者	ELSEVIER SCI LTD
引用统计	被引频次：29[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/97182
专题	中国科学院金属研究所
通讯作者	Chen, Y. C.
作者单位	1.Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Inst Mat Res, State Key Lab Corros & Protect, Shenyang 110016, Peoples R China 3.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Ctr Corros & Protect, Beijing 100083, Peoples R China 4.Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
推荐引用方式 GB/T 7714	Chen, Y. C.,Xu, J.,Fan, X. H.,et al. The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2[J]. INTERMETALLICS,2009,17(11):920-926.
APA	Chen, Y. C..,Xu, J..,Fan, X. H..,Zhang, X. F..,Han, L..,...&Uher, C..(2009).The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2.INTERMETALLICS,17(11),920-926.
MLA	Chen, Y. C.,et al."The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2".INTERMETALLICS 17.11(2009):920-926.