Preferential growth of helium-doped Ti films deposited by magnetron sputtering

doi:10.1116/1.3253087

IMR OpenIR

	Preferential growth of helium-doped Ti films deposited by magnetron sputtering
	Zhang, Lei 1; Shi, L. Q.1; He, Z. J.1; Zhang, B.1; Wang, L. B.2
通讯作者	Shi, L. Q.(lqshi@fudan.edu.cn)
	2009-11-01
发表期刊	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
ISSN	0734-2101
卷号	27 期号:6 页码:1392-1399
摘要	The authors present a study on the influence of the bias voltages on the preferred orientation and microstructure of helium-doped Ti films. The films were deposited in a vacuum chamber by both direct-current magnetron sputtering and electron-cyclotron-resonance plasma-aided magnetron sputtering (ECR-PMS) methods. The preferred orientation and microstructure of the films were analyzed by x-ray diffraction (XRD) and transmission electron microscopy. They found that the preferred crystal orientation of helium-doped Ti films was controllably varied from (002) to (100) orientation by increasing the bias voltage (i.e., ion bombardment current and energy). The dominant bombardment effect on the orientation was from the Ar ions of the anode sheath in the magnetron sputtering plasma, and He bombardment also showed a slight influence on the orientation transformation at low trapped-helium content in the crystal. The XRD peak broadening of helium-doped Ti films prepared by ECR-PMS is much more serious than for conventional magnetron sputtering even at low helium concentrations. It is believed that asynchronous bombardment from He ions in the ECR plasma area and Ar ions in the deposition plasma during film growth significantly decreases the mobility of Ti adatoms on the surface and enhances the growth of helium-induced defects, thus increasing the crystal disorder and influencing the crystal orientation transformation. On the contrary, the sequential bombardment of He and Ar particles can decrease helium-dissolution produced defects and improve crystallization. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3253087]
资助者	National Nature Science Foundation of China ; Shanghai Leading Academic Discipline Project
DOI	10.1116/1.3253087
收录类别	SCI
语种	英语
资助项目	National Nature Science Foundation of China[10675034] ; National Nature Science Foundation of China[10475016] ; Shanghai Leading Academic Discipline Project[B107]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Coatings & Films ; Physics, Applied
WOS记录号	WOS:000271284500021
出版者	A V S AMER INST PHYSICS
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/97543
专题	中国科学院金属研究所
通讯作者	Shi, L. Q.
作者单位	1.Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China 2.Chinese Acad Sci, Inst Met Phys, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Lei,Shi, L. Q.,He, Z. J.,et al. Preferential growth of helium-doped Ti films deposited by magnetron sputtering[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2009,27(6):1392-1399.
APA	Zhang, Lei,Shi, L. Q.,He, Z. J.,Zhang, B.,&Wang, L. B..(2009).Preferential growth of helium-doped Ti films deposited by magnetron sputtering.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,27(6),1392-1399.
MLA	Zhang, Lei,et al."Preferential growth of helium-doped Ti films deposited by magnetron sputtering".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 27.6(2009):1392-1399.